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UCC27311A

ACTIVE

120V 4.5A half-bridge driver with 8V UVLO and enable options

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Data sheet

UCC27311A

ACTIVE
Order now

Product details

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Enable, Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
VSON (DRC) 10 9 mm² (3 mm × 3 mm)
  • Drives two N-channel MOSFETs in half-bridge configuration
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled
  • Drives two N-channel MOSFETs in half-bridge configuration
  • –40°C to +150°C junction temperature range
  • 120V abs max voltage on HB pin
  • 3.7A sink, 4.5A source output currents
  • 8V to 17V VDD operating range (20V abs max) with UVLO
  • –(28–VDD)V abs max negative transient tolerance on HS pin (<100ns pulse)
  • –10V to +20V abs max input pins tolerance, independent of supply voltage range (TTL compatible)
  • Switching parameters:
    • 20ns typical propagation delay times
    • 7.2ns rise and 5.5ns fall time with 1000pF load
    • 4ns typical delay matching
  • Integrated bootstrap diode
  • Enable/disable functionality with low current consumption (3µA typical) when disabled

The UCC27311A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27311A is a robust gate driver designed to drive two N-channel MOSFETs in a half-bridge or synchronous buck configuration with an absolute maximum bootstrap voltage of 120V. Its 3.7A peak source and 4.5A peak sink current capability allows the UCC27311A to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching node (HS pin) can handle negative transient voltage, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance.

The inputs are independent of supply voltage and are able to withstand -10V and +20V absolute maximum ratings. The low-side and high-side gate drivers are matched to 4ns between the turn on and turn off of each other and are controlled throught the LI and HI input pins respectively. An on-chip 120V rated bootstrap diode eliminates the need to add discrete bootstrap diodes. Undervoltage lockout (UVLO) is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.
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Technical documentation

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* Data sheet UCC27311A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO and Enable datasheet PDF | HTML Jul 23, 2024
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML Mar 2, 2026
Application note Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML Feb 27, 2026
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML Jan 24, 2024
Application note How to Choose a Gate Driver for DC Motor Drives PDF | HTML Oct 5, 2023
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) Apr 7, 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. May 12, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives Oct 22, 2019
Application note Maximizing DC/DC converter designs with UCC27282 Jan 18, 2019
Application note UCC27282 Improving motor drive system robustness Jan 11, 2019

Design & development

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Evaluation board

UCC27282EVM-335 — UCC27282 120-V, 3-A, 5-V UVLO high-side low-side gate driver evaluation module

UCC27282EVM-335 is designed for evaluating UCC27282DRC, which is a 120V half bridge gate driver with high source and sink peak current capability. This EVM could be served to evaluate the driver IC against its datasheet. The EVM can also be used as Driver IC component selection guide. The EVM can (...)
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