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UCC27884-Q1

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Automotive 230V 4A half-bridge driver with 8V UVLO, and enable

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Data sheet

UCC27884-Q1

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Product details

Bootstrap supply voltage (max) (V) 230 Power switch IGBT, MOSFET Input supply voltage (min) (V) 8.5 Input supply voltage (max) (V) 20 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.029 Rise time (ns) 7.5 Fall time (ns) 6.5 Switch node voltage (V) -23
Bootstrap supply voltage (max) (V) 230 Power switch IGBT, MOSFET Input supply voltage (min) (V) 8.5 Input supply voltage (max) (V) 20 Peak output current (A) 4 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Automotive Propagation delay time (µs) 0.029 Rise time (ns) 7.5 Fall time (ns) 6.5 Switch node voltage (V) -23
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1
  • Dual independent inputs for high-side and low-side drivers with interlock (UCC27834-Q1) or no interlock (UCC27884-Q1)
  • Maximum bootstrap voltage: +230V (HB pin)
  • VDD bias recommended range: 8.5V to 20V
  • Peak output current: 3.5A source, 4A sink
  • Fast propagation delay: 29ns typical
  • Tight propagation delay matching between HO/LO: <5ns maximum
  • dV/dt immunity: 100V/ns
  • Low quiescent supply current draw
    • 150µA (typical) on VDD
    • 90µA (typical) on HB
  • Built-in UVLO protection for both high and low side channels: 8V
  • Floating channel designed for bootstrap operation
  • Available in standard SOIC-8 package
  • All parameters specified over temperature range: –40°C to +150°C
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1
  • Dual independent inputs for high-side and low-side drivers with interlock (UCC27834-Q1) or no interlock (UCC27884-Q1)
  • Maximum bootstrap voltage: +230V (HB pin)
  • VDD bias recommended range: 8.5V to 20V
  • Peak output current: 3.5A source, 4A sink
  • Fast propagation delay: 29ns typical
  • Tight propagation delay matching between HO/LO: <5ns maximum
  • dV/dt immunity: 100V/ns
  • Low quiescent supply current draw
    • 150µA (typical) on VDD
    • 90µA (typical) on HB
  • Built-in UVLO protection for both high and low side channels: 8V
  • Floating channel designed for bootstrap operation
  • Available in standard SOIC-8 package
  • All parameters specified over temperature range: –40°C to +150°C

The UCC278X4-Q1 is a 230V half-bridge gate driver with 3.5A source, 4A sink current, targeted to drive power MOSFETs. The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed to drive half-bridge configured MOSFETs operating with bootstrap power supplies. The device features fast propagation delays and excellent delay matching between both channels. The UCC278X4-Q1 allows a wide VDD operating voltage of 8.5V to 20V to support a wider range of gate voltage drive, as well as UVLO protection for both the low-side (VDD) and the high-side (HB) bias supplies. The UCC27834-Q1 includes an interlock function option to prevent both outputs from being turned on simultaneously

The device features robust drive with excellent noise and transient immunity including high dV/dt tolerance (100V/ns), and wide negative transient safe operating area (NTSOA) on the switch node (HS). The UCC278X4-Q1 is available in the SOIC-8 pin package and is rated to operate from –40°C to 150°C.

The UCC278X4-Q1 is a 230V half-bridge gate driver with 3.5A source, 4A sink current, targeted to drive power MOSFETs. The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed to drive half-bridge configured MOSFETs operating with bootstrap power supplies. The device features fast propagation delays and excellent delay matching between both channels. The UCC278X4-Q1 allows a wide VDD operating voltage of 8.5V to 20V to support a wider range of gate voltage drive, as well as UVLO protection for both the low-side (VDD) and the high-side (HB) bias supplies. The UCC27834-Q1 includes an interlock function option to prevent both outputs from being turned on simultaneously

The device features robust drive with excellent noise and transient immunity including high dV/dt tolerance (100V/ns), and wide negative transient safe operating area (NTSOA) on the switch node (HS). The UCC278X4-Q1 is available in the SOIC-8 pin package and is rated to operate from –40°C to 150°C.
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* Data sheet UCC278X4-Q1 High-Speed, Automotive 230V Half-Bridge Driver With 3.5A, 4A Drive Strength and up to 100V/ns Noise Immunity datasheet (Rev. A) PDF | HTML Nov 19, 2025
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML Mar 25, 2024
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML Jan 24, 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML Jan 22, 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML Sep 8, 2023
Application note Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML Feb 17, 2022
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) Apr 7, 2021
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. May 12, 2020
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020

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Evaluation board

UCC27288EVM — UCC27288 100-V, 3-A, 8-V UVLO half-bridge gate driver evaluation module

UCC27288EVM is designed for evaluating UCC27288D, which is a 100-V half bridge gate driver with 2.5-A peak source current and 3.5-A peak sink current capability. This EVM serves as a reference design for driving power MOSFETs with up to 20-V drive voltage.
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