Información de empaque
| Encapsulado | Pines HVSSOP (DGN) | 8 |
| Rango de temperatura de funcionamiento (℃) -40 to 125 |
| Cant. de paquetes | Transportador 250 | SMALL T&R |
Características para EMB1412
- Compound CMOS and Bipolar Outputs Reduce
Output Current Variation - 7 A Sink/3 A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise
Fall with 2 nF Load) - Inverting and Non-Inverting Inputs Provide
Either Configuration with a Single Device - Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split
Supply or Single Supply Operation - Thermally Enhanced 8-Pin VSSOP Package
- Output Swings from VCC to VEE Which can
be Negative Relative to Input Ground
Descripción de EMB1412
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.