Información de empaque
| Encapsulado | Pines VSSOP (DGK) | 8 |
| Rango de temperatura de funcionamiento (℃) -40 to 125 |
| Cant. de paquetes | Transportador 2,500 | LARGE T&R |
Características para LM74670-Q1
- AEC-Q100 Qualified With the Following
Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Exceeds HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
- Peak Input AC Voltage: 42 V
- Zero IQ
- Charge Pump Gate Driver for external N-Channel MOSFET
- Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
- Capable of handling AC signal up to 300-Hz Frequency
Descripción de LM74670-Q1
The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters.
The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.