Información de empaque
| Encapsulado | Pines VSON (DRM) | 8 |
| Rango de temperatura de funcionamiento (℃) -40 to 140 |
| Cant. de paquetes | Transportador 250 | SMALL T&R |
Características para UCC27210
- Drives Two N-Channel MOSFETs in High-Side
and Low-Side Configuration With Independent
Inputs - Maximum Boot Voltage 120-V DC
- 4-A Sink, 4-A Source Output Currents
- 0.9-Ω Pullup and Pulldown Resistance
- Input Pins Can Tolerate –10 V to 20 V and Are
Independent of Supply Voltage Range - TTL or Pseudo-CMOS Compatible Input Versions
- 8-V to 17-V VDD Operating Range, (20-V Absolute
Maximum) - 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF
Load - Fast Propagation Delay Times (18 ns Typical)
- 2-ns Delay Matching
- Symmetrical Undervoltage Lockout for High-Side
and Low-Side Driver - All Industry Standard Packages Available (SOIC-8,
PowerPAD™ SOIC-8, 4-mm × 4-mm SON-8
and 4-mm × 4-mm SON-10) - Specified from –40 to 140 °C
Descripción de UCC27210
The UCC27210 and UCC27211 drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4-A source and 4-A sink, and pull-up and pull-down resistance have been reduced to 0.9 Ω, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20-V.
The switching node (HS pin) of the UCC2721x can handle –18 V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. The UCC27210 (Pseudo-CMOS inputs) and UCC27211 (TTL inputs) have increased hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.
The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turnon and turnoff of each other.
An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers providing symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the specified threshold.
Both devices are offered in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4-mm × 4-mm SON-8 (DRM) and SON-10 (DPR) packages.