封裝資訊
| 封裝 | 引腳 SOIC (D) | 8 |
| 作業溫度範圍 (°C) -40 to 125 |
| 包裝數量 | 運送包裝 3,000 | LARGE T&R |
ISO6721-Q1 的特色
-
Functional Safety-Capable
- Documentation available to aid functional safety system design: ISO6720-Q1, ISO6721-Q1
- AEC-Q100 qualified with the following results:
- Device temperature Grade 1: –40°C to +125°C ambient operating temperature range
- Meets VDA320 isolation requirements
- 50-Mbps data rate
- Robust isolation barrier:
- High lifetime at 1060 VRMS working voltage
- Up to 5000 VRMS isolation rating
- ±150 kV/µs typical CMTI
- Wide supply range: 1.71 V to 1.89 V and 2.25 V to 5.5 V
- 1.71-V to 5.5-V level translation
- Default output High (ISO672x-Q1) and Low (ISO672xF-Q1) Options
- 1.8 mA per channel typical at 1 Mbps
- Low propagation delay: 11 ns typical
- Robust electromagnetic compatibility (EMC)
- System-Level ESD, EFT, and surge immunity
- ±8 kV IEC 61000-4-2 contact discharge protection across isolation barrier
- Low emissions
- Narrow-SOIC (D-8) and Wide-SOIC (DWV-8) package
- Safety-Related Certifications:
- DIN VDE V 0884-11:2017-01
- UL 1577 component recognition program
- IEC 62368-1, IEC 61010-1, IEC 60601-1
- GB 4943.1-2011
ISO6721-Q1 的說明
The ISO672x-Q1 devices are high-performance, dual-channel digital isolators ideal for cost sensitive applications requiring up to 5000 VRMS (DWV package) and 3000 VRMS (D package) isolation ratings per UL 1577. These devices are also certified by VDE, TUV, CSA, and CQC.
The ISO672x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. The ISO6720-Q1 device has 2 isolation channels with both channels in the same direction. The ISO6721-Q1 device has 2 isolation channels with 1 channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.