This small form factor power supply provides bias power to isolated silicon carbide (SiC) or gallium nitride (GaN) MOSFET gate drivers when extremely high dV/dT on the secondary side is expected, such as wideband gap switches. The board accepts 24V input and supplies 12V at 200mA. The resonant inductor-inductor-capacitor (LLC) topology, combined to low primary to secondary winding capacitance, makes this converter an option for low-noise and high common-mode transient immunity (CMTI) applications, while reducing common-mode current injection through the transformer. Even though this isolated LLC converter works in open-loop, the output voltage keeps tracking VIN and has very low variation versus load current.
| Output voltage options | PMP31333.1 |
|---|---|
| Vin (Min) (V) | 22 |
| Vin (Max) (V) | 26 |
| Vout (Nom) (V) | 12 |
| Iout (Max) (A) | .2 |
| Output Power (W) | 2.4 |
| Isolated/Non-Isolated | Isolated |
| Input Type | DC |
| Topology | Half Bridge- Resonant |
A fully assembled board has been developed for testing and performance validation only, and is not available for sale.
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Includes TI products in the design and potential alternatives.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Test report | Reinforced-Isolation LLC Converter Reference Design for SiC and GaN Driving Supply | PDF | HTML | Feb 25, 2025 |
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