In order to achieve higher efficiency, power density and high-voltage isolation in traction inverters, on-board chargers (OBC) and high-voltage DC/DC converters in HEV/EVs, engineers can rely on the use of advanced isolated gate drivers, isolated bias supply solutions as well as GaN, SiC and IGBT FETs. Isolated gate drivers and bias supplies in the power stage help address the increasingly stringent reliability and efficiency requirements in HEV/EVs and streamline functional safety up to ASIL D through centralized, semi-distributed and distributed architectures. This video demonstrates a power-dense solution using the UCC5870-Q1 isolated gate driver and the UCC14240-Q1 isolated DC/DC bias supply module with integrated transformer in a fully-distributed architecture that ultimately helps designers extend the driving range per charge. It also demonstrates the UCC25800-Q1 isolated gate driver DC/DC bias supply converter in a centralized and semi-distributed architecture, which helps minimize EMI and deliver high performance.