Demystifying isolated gate drivers in DC EV fast charging applications webinar
Selecting the right isolated gate driver for your Silicon Carbide (SiC) FET needs more attention than you might think.
Highly efficient DC charging stations play a significant role to support fast charging requirements for new electric vehicles. SiC FETs & GaN FETs greatly support those efficiency goals, but when it comes to selecting the right isolated gate driver for SiC FETs, it takes a new mindset in thinking.
During this session, we discussed about:
- Key care-abouts of the isolated gate drivers driving SiC FETs: gate drive strength, propagation delay, etc. while focusing on the landscape of integrated protection features like OCP/DESAT, Miller Clamp, Soft- turn off or 2-Level turn off.
- Importance of optimal gate drive voltage, helping to prevent shoot through events and/or to improve the overall converter efficiency.
Our speaker, Johannes Konert - Field Application Engineer at Texas Instruments is working as Principal Field Application Engineer for Texas Instruments. After receiving his Diploma in Electric Power Engineering (FH Bielefeld 1992), he worked for more than 13Y as SMPS-Designer. He joined TI in April 2006 as Power Management FAE and is today Member of the Tech-ladder (MGTS) within the EMEA Sales & Applications organization.
Is this getting too complicated? If you would like to join the webinar, but need more background information we recommend you watch our short video 'Overview of power topologies for DC EV chargers'
downloadSiC Gate Driver Fundamentals e-book
downloadWide-bandgap semiconductors: Performance and benefits of GaN versus SiC
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