650-V GaN devices have lower switching losses and are capable of switching at higher frequencies that comparable Si devices; which is further enabled in TI GaN products by integrating an integrated gate driver that minimizes parasitic components and makes high power design easier. Included is TI’s latest top-side cooled GaN devices from the LMG3522 family, which additionally include built-in protection and power management. TI C2000™ controllers and TI digital isolators enable minimal deadtimes and advanced controls.