SLUSD83C june   2018  – may 2023 BQ25713 , BQ25713B

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Device Comparison Table
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power-Up from Battery Without DC Source
      2. 9.3.2  Vmin Active Protection (VAP) when Battery only Mode
      3. 9.3.3  Power-Up From DC Source
        1. 9.3.3.1 CHRG_OK Indicator
        2. 9.3.3.2 Input Voltage and Current Limit Setup
        3. 9.3.3.3 Battery Cell Configuration
        4. 9.3.3.4 Device Hi-Z State
      4. 9.3.4  USB On-The-Go (OTG)
      5. 9.3.5  Converter Operation
        1. 9.3.5.1 Inductance Detection Through IADPT Pin
        2. 9.3.5.2 Continuous Conduction Mode (CCM)
        3. 9.3.5.3 Pulse Frequency Modulation (PFM)
      6. 9.3.6  Current and Power Monitor
        1. 9.3.6.1 High-Accuracy Current Sense Amplifier (IADPT and IBAT)
        2. 9.3.6.2 High-Accuracy Power Sense Amplifier (PSYS)
      7. 9.3.7  Input Source Dynamic Power Manage
      8. 9.3.8  Two-Level Adapter Current Limit (Peak Power Mode)
      9. 9.3.9  Processor Hot Indication
        1. 9.3.9.1 PROCHOT During Low Power Mode
        2. 9.3.9.2 PROCHOT Status
      10. 9.3.10 Device Protection
        1. 9.3.10.1 Watchdog Timer
        2. 9.3.10.2 Input Overvoltage Protection (ACOV)
        3. 9.3.10.3 Input Overcurrent Protection (ACOC)
        4. 9.3.10.4 System Overvoltage Protection (SYSOVP)
        5. 9.3.10.5 Battery Overvoltage Protection (BATOVP)
        6. 9.3.10.6 Battery Short
        7. 9.3.10.7 System Short Hiccup Mode
        8. 9.3.10.8 Thermal Shutdown (TSHUT)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Forward Mode
        1. 9.4.1.1 System Voltage Regulation with Narrow VDC Architecture
        2. 9.4.1.2 Battery Charging
      2. 9.4.2 USB On-The-Go
      3. 9.4.3 Pass Through Mode (PTM)
    5. 9.5 Programming
      1. 9.5.1 I2C Serial Interface
        1. 9.5.1.1 Data Validity
        2. 9.5.1.2 START and STOP Conditions
        3. 9.5.1.3 Byte Format
        4. 9.5.1.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 9.5.1.5 Slave Address and Data Direction Bit
        6. 9.5.1.6 Single Read and Write
        7. 9.5.1.7 Multi-Read and Multi-Write
        8. 9.5.1.8 Write 2-Byte I2C Commands
    6. 9.6 Register Map
      1. 9.6.1  Setting Charge and PROCHOT Options
        1. 9.6.1.1 ChargeOption0 Register (I2C address = 01/00h) [reset = E70Eh]
        2. 9.6.1.2 ChargeOption1 Register (I2C address = 31/30h) [reset = 0211h]
        3. 9.6.1.3 ChargeOption2 Register (I2C address = 33/32h) [reset = 02B7h]
        4. 9.6.1.4 ChargeOption3 Register (I2C address = 35/34h) [reset = 0030h]
        5. 9.6.1.5 ProchotOption0 Register (I2C address = 37/36h) [reset = 4A65h]
        6. 9.6.1.6 ProchotOption1 Register (I2C address = 39/38h) [reset = 81A0h]
        7. 9.6.1.7 ADCOption Register (I2C address = 3B/3Ah) [reset = 2000h]
      2. 9.6.2  Charge and PROCHOT Status
        1. 9.6.2.1 ChargerStatus Register (I2C address = 21/20h) [reset = 0000h]
        2. 9.6.2.2 ProchotStatus Register (I2C address = 23/22h) [reset = A800h]
      3. 9.6.3  ChargeCurrent Register (I2C address = 03/02h) [reset = 0000h]
        1. 9.6.3.1 Battery Precharge Current Clamp
      4. 9.6.4  MaxChargeVoltage Register (I2C address = 05/04h) [reset value based on CELL_BATPRESZ pin setting]
      5. 9.6.5  MinSystemVoltage Register (I2C address = 0D/0Ch) [reset value based on CELL_BATPRESZ pin setting]
        1. 9.6.5.1 System Voltage Regulation
      6. 9.6.6  Input Current and Input Voltage Registers for Dynamic Power Management
        1. 9.6.6.1 Input Current Registers
          1. 9.6.6.1.1 IIN_HOST Register With 10-mΩ Sense Resistor (I2C address = 0F/0Eh) [reset = 4100h]
          2. 9.6.6.1.2 IIN_DPM Register With 10-mΩ Sense Resistor (I2C address = 25/24h) [reset = 4100h]
          3. 9.6.6.1.3 InputVoltage Register (I2C address = 0B/0Ah) [reset = VBUS-1.28V]
      7. 9.6.7  OTGVoltage Register (I2C address = 07/06h) [reset = 0000h]
      8. 9.6.8  OTGCurrent Register (I2C address = 09/08h) [reset = 0000h]
      9. 9.6.9  ADCVBUS/PSYS Register (I2C address = 27/26h)
      10. 9.6.10 ADCIBAT Register (I2C address = 29/28h)
      11. 9.6.11 ADCIINCMPIN Register (I2C address = 2B/2Ah)
      12. 9.6.12 ADCVSYSVBAT Register (I2C address = 2D/2Ch)
      13. 9.6.13 ID Registers
        1. 9.6.13.1 ManufactureID Register (I2C address = 2Eh) [reset = 0040h]
        2. 9.6.13.2 Device ID (DeviceAddress) Register (I2C address = 2Fh) [reset = 0h]
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 ACP-ACN Input Filter
        2. 10.2.2.2 Inductor Selection
        3. 10.2.2.3 Input Capacitor
        4. 10.2.2.4 Output Capacitor
        5. 10.2.2.5 Power MOSFETs Selection
      3. 10.2.3 Application Curves
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
      1. 12.2.1 Layout Example Reference Top View
      2. 12.2.2 Inner Layer Layout and Routing Example
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.2.2.4 Output Capacitor

Output capacitor also should have enough ripple current rating to absorb output switching ripple current. To get good loop stability, the resonant frequency of the output inductor and output capacitor should be designed between 10 kHz and 20 kHz. The preferred ceramic capacitor is 25-V X7R or X5R for output capacitor. Minimum 7 pcs of 10-μF 0603 package capacitor is suggested to be placed as close as possible to Q3&Q4 half bridge (between Q4 drain and Q3 source terminal). Total minimum output effective capacitance along VSYS distribution line is 50 μF refers to Table 10-2. Recommend to place minimum 20-μF MLCC capacitors after the charge current sense resistor for best stability.

Ceramic capacitors show a dc-bias effect. This effect reduces the effective capacitance when a dc-bias voltage is applied across a ceramic capacitor, as on the output capacitor of a charger. The effect may lead to a significant capacitance drop, especially for high output voltages and small capacitor packages. See the manufacturer's data sheet about the derating performance with a dc bias voltage applied. It may be necessary to choose a higher voltage rating or nominal capacitance value in order to get the required capacitance value at the operating point. Considering the 25-V 0603 package MLCC capacitance derating under 21-V to 23-V output voltage, the recommended practical capacitors configuration at VSYS output terminal can also be found in Table 10-2. Tantalum capacitors (POSCAP) can avoid dc-bias effect and temperature variation effect which are recommended to be used along VSYS output distribution line to meet total minimum effective output capacitance requirement.

Table 10-2 Minimum Output Capacitance Requirement
OUTPUT CAPACITORS VS TOTAL INPUT POWER 65W 90W 130W
Minimum Effective Output Capacitance 50 μF 50 μF 50 μF
Minimum output capacitors at charger VSYS output terminal 7*10 μF (0603 25 V MLCC) 9*10 μF (0603 25 V MLCC) 9*10 μF (0603 25 V MLCC)
Additional output capacitors along VSYS distribution line 2*22 μF (25 V~35 V POSCAP) 2*22 μF (25 V~35 V POSCAP) 2*22 μF (25 V~35 V POSCAP)