SLUSE97 November   2023 BQ76905

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  REGOUT LDO
    8. 6.8  Voltage References
    9. 6.9  Coulomb Counter
    10. 6.10 Coulomb Counter Digital Filter
    11. 6.11 Current Wake Detector
    12. 6.12 Analog-to-Digital Converter
    13. 6.13 Cell Balancing
    14. 6.14 Internal Temperature Sensor
    15. 6.15 Thermistor Measurement
    16. 6.16 Hardware Overtemperature Detector
    17. 6.17 Internal Oscillator
    18. 6.18 Charge and Discharge FET Drivers
    19. 6.19 Comparator-Based Protection Subsystem
    20. 6.20 Timing Requirements—I2C Interface, 100-kHz Mode
    21. 6.21 Timing Requirements—I2C Interface, 400-kHz Mode
    22. 6.22 Timing Diagram
    23. 6.23 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Configuration
      1. 7.3.1 Commands and Subcommands
      2. 7.3.2 Configuration Using OTP or Registers
      3. 7.3.3 Device Security
    4. 7.4 Device Hardware Features
      1. 7.4.1  Voltage ADC
      2. 7.4.2  Coulomb Counter and Digital Filters
      3. 7.4.3  Protection FET Drivers
      4. 7.4.4  Voltage References
      5. 7.4.5  Multiplexer
      6. 7.4.6  LDOs
      7. 7.4.7  Standalone Versus Host Interface
      8. 7.4.8  ALERT Pin Operation
      9. 7.4.9  Low Frequency Oscillator
      10. 7.4.10 I2C Serial Communications Interface
    5. 7.5 Measurement Subsystem
      1. 7.5.1 Voltage Measurement
        1. 7.5.1.1 Voltage ADC Scheduling
        2. 7.5.1.2 Unused VC Pins
        3. 7.5.1.3 General Purpose ADCIN Functionality
      2. 7.5.2 Current Measurement and Charge Integration
      3. 7.5.3 Internal Temperature Measurement
      4. 7.5.4 Thermistor Temperature Measurement
      5. 7.5.5 Factory Trim and Calibration
    6. 7.6 Protection Subsystem
      1. 7.6.1 Protections Overview
      2. 7.6.2 Primary Protections
      3. 7.6.3 CHG Detector
      4. 7.6.4 Cell Open-Wire Protection
      5. 7.6.5 Diagnostic Checks
    7. 7.7 Cell Balancing
    8. 7.8 Device Operational Modes
      1. 7.8.1 Overview of Operational Modes
      2. 7.8.2 NORMAL Mode
      3. 7.8.3 SLEEP Mode
      4. 7.8.4 DEEPSLEEP Mode
      5. 7.8.5 SHUTDOWN Mode
      6. 7.8.6 CONFIG_UPDATE Mode
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Random Cell Connection Support
      5. 8.2.5 Startup Timing
      6. 8.2.6 FET Driver Turn-Off
      7. 8.2.7 Usage of Unused Pins
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Comparator-Based Protection Subsystem

Typical values stated where TA = 25°C and VBAT = 18.5 V, min/max values stated where TA = -40°C to 110°C and VBAT = 3 V to 27.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(SCD) Short circuit in discharge voltage threshold range Nominal settings, threshold based on VSRP – VSRN –10,
–20,
–40,
–60,
–80,
–100,
–125,
–150,
–175,
–200,
–250,
–300,
–350,
–400,
–450,
–500
mV
V(SCD_ACC) Short circuit in discharge voltage threshold detection accuracy (2) –10 mV setting –36 22 % of nominal threshold
–20 mV setting –19 12 % of nominal threshold
–40 mV setting –14 6 % of nominal threshold
Settings –60 mV to -500 mV –11 6 % of nominal threshold
V(SCD_DLY) Short circuit in discharge detection delay(1) Fastest setting (with 3 mV overdrive) 8 µs
Fastest setting (with 25 mV overdrive) 0.6 µs
Setting for 15 µs (with 3 mV overdrive) 20 28 µs
Setting for 15 µs (with 25 mV overdrive) 20 µs
Settings for 31 µs (with 25 mV overdrive) 14 35 µs
Settings for 61 µs (with 25 mV overdrive) 42 66 µs
Settings for 122 µs (with 25 mV overdrive) 102 130 µs
Settings for 244 µs (with 25 mV overdrive) 218 258 µs
Settings for 488 µs (with 25 mV overdrive) 452 510 µs
Settings for 977 µs (with 25 mV overdrive) 920 1018 µs
Settings for 1953 µs (with 25 mV overdrive) 1860 2034 µs
Settings for 3906 µs (with 25 mV overdrive) 3735 4065 µs
Setting for 7797 µs (with 25 mV overdrive) 7470 8112 µs
V(OCC) Overcurrent in charge (OCC) voltage threshold range Nominal settings, threshold based on VSRP – VSRN 3 mV to 123 mV in 2 mV steps mV
V(OCC_ACC) Overcurrent in charge (OCC) voltage threshold accuracy (2) Settings 3 mV to 19 mV –1.17 1.32 mV
V(OCC_ACC) Overcurrent in charge (OCC) voltage threshold accuracy (2) Settings 21 mV to 55 mV -1.68 2.99 mV
V(OCC_ACC) Overcurrent in charge (OCC) voltage threshold accuracy (2) Settings 57 mV to 123 mV -1.61 4.10 mV
V(OCD) Overcurrent in discharge (OCD1, OCD2) voltage threshold ranges Nominal settings, thresholds based on VSRP – VSRN –4 mV to –200 mV in 2 mV steps mV
V(OCD_ACC) Overcurrent (OCD1, OCD2) detection voltage threshold accuracy (2) Settings -4 mV to -18 mV –1.23 0.84 mV
Settings  -20 mV to -56 mV –2.84 1.59 mV
Settings -58 mV to -100 mV -2.15 2.58 mV
Settings -102 mV to -200 mV -2,86 4,19 mV
V(OC_DLY) Overcurrent (OCC, OCD1, OCD2) detection delay (independent delay setting for each protection) Fastest setting 0.46 ms
Nominal settings, low range 1.22 ms to 20.435 ms in 0.305 ms steps ms
Nominal settings, medium low range 22.875 ms to 176.595 ms in 2.441 ms steps ms
Nominal settings, medium high range 181.475 ms to 488.915 ms in 4.883 ms steps ms
Nominal settings, high range 498.675 ms to 1103.795 ms in 9.766 ms steps ms
V(OC_DLY) Overcurrent (OCC, OCD1, OCD2) detection delay accuracy(1) Fastest setting -0.35 0.35 ms
Nominal settings, low range -1.2 0.90 ms
Nominal settings, medium low range -7.5 7.2 ms
Nominal settings, medium high range -20 20 ms
Nominal settings, high range -45 45 ms
Specified by design
Specified by a combination of characterization and production test