SLPS535 March   2015 CSD13302W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Thermal Information
    2. 5.2 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13302W Package Dimensions
      1. 7.1.1 Land Pattern Recommendation
    2. 7.2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZB|4
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

Electrical Characteristics

(TA = 25°C)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 , ID = 250 μA 12 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 9.6 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 10 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 0.7 1.0 1.3 V
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V, ID = 1 A 21.2 25.8 mΩ
VGS = 4.5 V, ID = 1 A 14.6 17.1
gƒs Transconductance VDS = 1.2 V, ID = 1 A 10 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 663 862 pF
COSS Output Capacitance 211 274 pF
CRSS Reverse Transfer Capacitance 151 196 pF
Rg Series Gate Resistance 3.6 7.2 Ω
Qg Gate Charge Total (4.5 V) VDS = 6 V, ID = 1 A 6.0 7.8 nC
Qgd Gate Charge Gate-to-Drain 2.1 nC
Qgs Gate Charge Gate-to-Source 0.7 nC
Qg(th) Gate Charge at Vth 0.7 nC
QOSS Output Charge VDS = 6 V, VGS = 0 V 1.3 nC
td(on) Turn On Delay Time VDS = 6 V, VGS = 4.5 V, ID = 1 A
RG = 0 Ω		 6 ns
tr Rise Time 7 ns
td(off) Turn Off Delay Time 17 ns
tƒ Fall Time 7 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IS = 1 A, VGS = 0 V 0.7 1.0 V
Qrr Reverse Recovery Charge VDS= 6 V, IS = 1 A, di/dt = 200 A/μs 11.6 nC
trr Reverse Recovery Time 19.6 ns

5.1 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-Ambient Thermal Resistance(1) 275 °C/W
Junction-to-Ambient Thermal Resistance(2) 70
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
CSD13302W M0149-01_LPS209.gif
 Typical RθJA = 70°C/W when mounted on
1 inch2 of 2 oz. Cu.
CSD13302W M0150-01_LPS209.gif
 Typical RθJA = 275°C/W when mounted on minimum pad area of 2 oz. Cu.

5.2 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD13302W D001_SLPS534.png
Figure 1. Transient Thermal Impedance
CSD13302W D002_SLPS534.gif
Figure 2. Saturation Characteristics
CSD13302W D004_SLPS534_r2.gif
ID = 1 A VDS = 6 V
Figure 4. Gate Charge
CSD13302W D006_SLPS534_r2.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD13302W D008_SLPS534.gif
ID = 1 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD13302W D010_SLPS534.gif
Single Pulse, Max RθJA = 275°C/W
Figure 10. Maximum Safe Operating Area
CSD13302W D003_SLPS534.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD13302W D005_SLPS534.gif
Figure 5. Capacitance
CSD13302W D007_SLPS534.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD13302W D009_SLPS534.gif
Figure 9. Typical Diode Forward Voltage
CSD13302W D012_SLPS536_r2.gif
Figure 11. Maximum Drain Current vs Temperature