SLPS200D January 2018 – October 2023 CSD16401Q5
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This 25-V, 1.3-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top ViewProduct Summary
| TA = 25°C | VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge, Total (4.5 V) | 21 | nC | |
| Qgd | Gate Charge, Gate-to-Drain | 5.2 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5 V | 1.8 | mΩ |
| VGS = 10 V | 1.3 | |||
| VGS(th) | Threshold Voltage | 1.5 | V | |
Device Information(1)
| DEVICE | MEDIA | QTY | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD16401Q5 | 13-Inch Reel | 2500 | SON 5.00-mm × 6.00-mm Plastic Package | Tape and Reel |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | –12 to 16 | V |
| ID | Continuous Drain Current (Package Limited) | 100 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 261 | ||
| Continuous Drain Current(1) | 38 | ||
| IDM | Pulsed Drain Current, TA = 25°C(2) | 240 | A |
| PD | Power Dissipation(1) | 3.1 | W |
| Power Dissipation, TC = 25°C | 156 | ||
| TJ, Tstg | Operating Junction, Storage Temperature | –55 to 150 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 100 A, L = 0.1 mH, RG = 25 Ω | 500 | mJ |
(1) RθJA = 40°C/W on 1-in2 (6.45-cm2) Cu 2-oz (0.071-mm) thick on 0.06-in (1.52-mm) thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(ON) vs
VGS
Gate Charge