SLPS484C January   2014  – May 2024 CSD19535KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA100V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 80V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA2.22.73.4V
RDS(on)Drain-to-Source On-ResistanceVGS = 6V, ID = 100A3.44.4mΩ
VGS = 10V, ID = 100A3.13.6mΩ
gfsTransconductanceVDS = 10V, ID = 100A274S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 50V, ƒ = 1MHz61007930pF
CossOutput Capacitance11601500pF
CrssReverse Transfer Capacitance2938pF
RGSeries Gate Resistance1.42.8Ω
QgGate Charge Total (10V)VDS = 50V, ID = 100A78101nC
QgdGate Charge Gate to Drain13nC
QgsGate Charge Gate to Source25nC
Qg(th)Gate Charge at Vth16nC
QossOutput ChargeVDS = 40V, VGS = 0V196nC
td(on)Turn On Delay TimeVDS = 50V, VGS = 10V,
IDS = 100A, RG = 0Ω		32ns
trRise Time15ns
td(off)Turn Off Delay Time60ns
tfFall Time5ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 100A, VGS = 0V0.91.1V
QrrReverse Recovery ChargeVDS= 50V, IF = 100A,
di/dt = 300A/μs		421nC
trrReverse Recovery Time89ns