SGLS387H July   2007  – August 2016 DAC5675A-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 DC Electrical Characteristics (Unchanged After 100 kRad)
    6. 7.6 AC Electrical Characteristics (Unchanged After 100 kRad)
    7. 7.7 Digital Specifications (Unchanged After 100 kRad)
    8. 7.8 Electrical Characteristics
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Digital Inputs
      2. 8.3.2 Clock Input
      3. 8.3.3 Supply Inputs
      4. 8.3.4 DAC Transfer Function
      5. 8.3.5 Reference Operation
      6. 8.3.6 Analog Current Outputs
    4. 8.4 Device Functional Modes
      1. 8.4.1 Sleep Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Definitions of Specifications and Terminology
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • HFG|52
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12 Device and Documentation Support

12.1 Device Support

12.1.1 Definitions of Specifications and Terminology

    ACPR or adjacent channel power ratio is defined for a 3.84-Mcps 3GPP W-CDMA input signal measured in a 3.84-MHz bandwidth at a 5-MHz offset from the carrier with a 12-dB peak-to-average ratio.
    APSSRor analog power supply ratio is the percentage variation of full-scale output current versus a 5% variation of the analog power supply AVDD from the nominal. This is a dc measurement.
    DPSSRor digital power supply ratio is the percentage variation of full-scale output current versus a 5% variation of the digital power supply DVDD from the nominal. This is a dc measurement.
    Gain error is as the percentage error in the ratio between the measured full-scale output current and the value of 16 × V(EXTIO)/RBIAS. A V(EXTIO) of 1.25 V is used to measure the gain error with an external reference voltage applied. With an internal reference, this error includes the deviation of V(EXTIO) (internal bandgap reference voltage) from the typical value of 1.25 V.
    Offset error is as the percentage error in the ratio of the differential output current (IOUT1-IOUT2) and half of the full-scale output current for input code 8192.
    SINADis the ratio of the RMS value of the fundamental output signal to the RMS sum of all other spectral components below the Nyquist frequency, including noise and harmonics, but excluding dc.
    SNRis the ratio of the RMS value of the fundamental output signal to the RMS sum of all other spectral components below the Nyquist frequency, including noise, but excluding the first six harmonics and dc.
    THD is the ratio of the RMS sum of the first six harmonic components to the RMS value of the fundamental output signal.

12.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.4 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.