SBOS793H April   2017  – November 2023 INA181 , INA2181 , INA4181

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 High Bandwidth and Slew Rate
      2. 7.3.2 Bidirectional Current Monitoring
      3. 7.3.3 Wide Input Common-Mode Voltage Range
      4. 7.3.4 Precise Low-Side Current Sensing
      5. 7.3.5 Rail-to-Rail Output Swing
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Unidirectional Mode
      3. 7.4.3 Bidirectional Mode
      4. 7.4.4 Input Differential Overload
      5. 7.4.5 Shutdown Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Basic Connections
      2. 8.1.2 RSENSE and Device Gain Selection
      3. 8.1.3 Signal Filtering
      4. 8.1.4 Summing Multiple Currents
      5. 8.1.5 Detecting Leakage Currents
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Common-Mode Transients Greater Than 26 V
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

at TA = 25°C, VS = 5 V, VREF = VS / 2, VIN+ = 12 V, and VSENSE = VIN+ – VIN– (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
CMRR Common-mode rejection ratio, RTI (1) VIN+ = 0 V to 26 V, VSENSE = 0 mV,
TA = –40°C to +125°C		 84 100 dB
VOS Offset voltage, RTI VSENSE = 0 mV, VIN+ = 0 V ±25 ±150 μV
VSENSE = 0 mV ±100 ±500 μV
dVOS/dT Offset drift, RTI VSENSE = 0 mV, TA = –40°C to +125°C 0.2 1 μV/°C
PSRR RTI vs power supply ratio VS = 2.7 V to 5.5 V, VIN+ = 12 V,

VSENSE = 0 mV		 ±8 ±40 μV/V
IIB Input bias current VSENSE = 0 mV, VIN+ = 0 V -6 μA
VSENSE = 0 mV 75 μA
IIO Input offset current VSENSE = 0 mV ±0.05 μA
OUTPUT
G Gain A1 devices 20 V/V
A2 devices 50 V/V
A3 devices 100 V/V
A4 devices 200 V/V
EG Gain error VOUT = 0.5 V to VS – 0.5 V,
TA = –40°C to +125°C		 ±0.1% ±1%
Gain error vs temperature TA = –40°C to +125°C 1.5 20 ppm/°C
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT (2) 
VSP Swing to VS power-supply rail (3) RL = 10 kΩ to GND, TA = –40°C to +125°C (VS) – 0.02 (VS) – 0.03 V
VSN Swing to GND (3) RL = 10 kΩ to GND,  TA = –40°C to +125°C (VGND) + 0.0005 (VGND) + 0.005 V
FREQUENCY RESPONSE
BW Bandwidth A1 devices, CLOAD = 10 pF 350 kHz
A2 devices, CLOAD = 10 pF 210 kHz
A3 devices, CLOAD = 10 pF 150 kHz
A4 devices, CLOAD = 10 pF 105 kHz
SR Slew rate 2 V/μs
NOISE, RTI (1)
Voltage noise density 40 nV/√Hz
POWER SUPPLY
IQ Quiescent current INA181 VSENSE = 0 mV 195 260 μA
VSENSE = 0 mV, TA = –40°C to +125°C 300
INA2181 VSENSE = 0 mV  356 500 μA
VSENSE = 0 mV, TA = –40°C to +125°C 520
INA4181 VSENSE = 0 mV  690 900 μA
VSENSE = 0 mV, TA = –40°C to +125°C 1000
(1) RTI = referred-to-input.
(3) Swing specifications are tested with an overdriven input condition.