SLLSEP3F November   2016  – April 2023 ISO7720 , ISO7721

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics—5-V Supply
    10. 6.10 Supply Current Characteristics—5-V Supply
    11. 6.11 Electrical Characteristics—3.3-V Supply
    12. 6.12 Supply Current Characteristics—3.3-V Supply
    13. 6.13 Electrical Characteristics—2.5-V Supply 
    14. 6.14 Supply Current Characteristics—2.5-V Supply
    15. 6.15 Switching Characteristics—5-V Supply
    16. 6.16 Switching Characteristics—3.3-V Supply
    17. 6.17 Switching Characteristics—2.5-V Supply
    18. 6.18 Insulation Characteristics Curves
    19. 6.19 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Electromagnetic Compatibility (EMC) Considerations
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device I/O Schematics
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
        1. 9.2.3.1 Insulation Lifetime
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 PCB Material
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DWV|8
  • DW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Insulation Specifications

PARAMETER TEST CONDITIONS VALUE UNIT
DW DWV D
IEC 60664-1
CLR External clearance(1) Shortest terminal-to-terminal distance through air 8 8.5 4 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface 8 8.5 4 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) 21 21 21 µm
CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112; UL 746A >600
>600		 >600 V
Material Group According to IEC 60664-1 I I I
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 150 VRMS I–IV I–IV I-IV
Rated mains voltage ≤ 300 VRMS I–IV I–IV I-III
Rated mains voltage ≤ 600 VRMS I–IV I–IV n/a
Rated mains voltage ≤ 1000 VRMS I-III I-III n/a
DIN EN IEC 60747-17 (VDE 0884-17)(2)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) ISO772x 2121 2121 637 VPK
ISO7721B 1414 n/a n/a
VIOWM Maximum working isolation voltage AC voltage; time-dependent dielectric breakdown (TDDB) test, see Figure 9-6 ISO772x 1500 1500 450 VRMS
ISO7721B 1000 n/a n/a
DC voltage ISO772x 2121 2121 637 VDC
ISO7721B 1414 n/a n/a
VIOTM Maximum transient isolation voltage VTEST = VIOTM , t = 60 s (qualification);
VTEST = 1.2 × VIOTM, t = 1 s (100% production)		 8000 7071 4242 VPK
VIMP Maximum impulse voltage (3) Tested in air, 1.2/50-μs waveform per IEC 62368-1 ISO772x 8000 8000 5000 VPK
ISO7721B 6000 n/a n/a
VIOSM Maximum surge isolation voltage(4) VIOSM ≥ 1.3 x VIMP; Tested in oil (qualification test),
1.2/50-µs waveform, per IEC 62368-1		 ISO772x 12800 12800 10000 VPK
ISO7721B 7800 n/a n/a VPK
qpd Apparent charge(5) Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s; 
Vpd(m) = 1.2 × VIORM , tm = 10 s		 ≤ 5 ≤ 5 ≤ 5 pC
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;		 Vpd(m) = 1.6 x VIORM, tm = 10 s (ISO772x) ≤ 5 ≤ 5 ≤ 5
Vpd(m) = 1.3 x VIORM, tm = 10 s (ISO7721B) ≤ 5 n/a n/a
Method b: At routine test (100% production) and preconditioning (type test);
Vini = 1.2 x VIOTM, tini = 1 s;
Vpd(m) = 1.875 x VIORM (ISO772x) or Vpd(m) = 1.5 x VIORM (ISO7721B) , tm = 1 s (method b1) or 
Vpd(m) = Vini, tm = tini (method b2)		 ≤ 5 ≤ 5 ≤ 5
CIO Barrier capacitance, input to output(6) VIO = 0.4 × sin (2 πft), f = 1 MHz ~0.5 ~0.5 ~0.5 pF
RIO Isolation resistance(6) VIO = 500 V,  TA = 25°C > 1012 > 1012 > 1012 Ω
VIO = 500 V,  100°C ≤ TA ≤ 125°C > 1011 > 1011 > 1011
VIO = 500 V at  TS = 150°C > 109 > 109 > 109
Pollution degree 2 2 2
Climatic category 55/125/21 55/125/21 55/125/21
UL 1577
VISO Withstand isolation voltage VTEST = VISO , t = 60 s (qualification);
VTEST = 1.2 × VISO , t = 1 s (100% production)		 5000 5000 3000 VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation (ISO772x) and basic electrical insulation (ISO7721B) only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
(3) Testing is carried out in air to determine the surge immunity of the package
(4) Testing is carried out in oil to determine the intrinsic surge immunity of the isolation barrier.
(5) Apparent charge is electrical discharge caused by a partial discharge (pd).
(6) All pins on each side of the barrier tied together creating a two-pin device.