SDLS975 April   2024 LSF0002

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics (Translating Down): BN = 3.3V
    7. 5.7 Switching Characteristics (Translating Down): BN = 2.5V
    8. 5.8 Switching Characteristics (Translating Up): BN = 3.3V
    9. 5.9 Switching Characteristics (Translating Up):BN = 2.5V
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Auto Bidirectional Voltage Translation
      2. 7.3.2 VBIAS/ Enable
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Open-Drain Interface (I2C, PMBus, SMBus, and GPIO)
        1. 8.2.1.1 Design Requirements
          1. 8.2.1.1.1 Enable and Disable Guidelines
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Bidirectional Translation
          2. 8.2.1.2.2 Pull-Up Resistor Sizing
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Mixed-Mode Voltage Translation
      3. 8.2.3 Voltage Translation for Vref_B < Vref_A + 0.8V
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DTQ|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(3) ±2000 V
V(ESD) Electrostatic discharge Charged device model (CDM), per AEC Q100-001 ±1000 V
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.
(3) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.