SNVS903B December   2012  – May 2016 SM74611

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 From t0 to t1
      2. 7.3.2 At t1
      3. 7.3.3 From t1 to t2
      4. 7.3.4 At t2
    4. 7.4 Device Functional Modes
      1. 7.4.1 FET Q1 OFF
      2. 7.4.2 FET Q1 ON
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
DC reverse voltage 30 V
Forward current 24 A
Junction temperature, t ≤ 1 hour 135 °C
Storage temperature, Tstg –65 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) System must be thermally managed so as not to exceed maximum junction temperature

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±1000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±250 V may actually have higher performance.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
DC reverse voltage 28 V
Junction temperature (TJ) –40 125 °C
Forward current 0 15 A
(1) System must be thermally managed so as not to exceed maximum junction temperature

6.4 Thermal Information

THERMAL METRIC(1) SM74611 UNIT
KTT (TO-263)
3 PINS
RθJA Junction-to-ambient thermal resistance 40.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.6 °C/W
RθJB Junction-to-board thermal resistance 23.0 °C/W
ψJT Junction-to-top characterization parameter 9.8 °C/W
ψJB Junction-to-board characterization parameter 22.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IF(AVG) Forward current 8 15 A
VF(AVG) Forward voltage IF = 8 A TJ = 25°C 26 mV
PD Power dissipation IF = 8 A TJ = 25°C 208 mW
TJ = 125°C 450
–40°C to 125°C(1) 575
IF = 15 A TJ = 25°C 695
TJ = 125°C 1389
D Duty cycle IF = 8 A TJ = 25°C 99.5%
TJ = 125°C 96.0%
IR Reverse leakage current VREVERSE = 28 V TJ = 25°C 0.3 µA
TJ = 125°C 3.3
(1) Limits –40°C to 125°C apply over the entire junction temperature range for operation. Limits appearing in normal type apply for TA = TJ = 25°C.

6.6 Typical Characteristics

SM74611 C003_SNVS903.gif Figure 1. Average Forward Voltage (Anode to Cathode)
Over Temperature
SM74611 C002_SNVS903.png Figure 3. Reverse Current Over Temperature (Cathode to Anode)
SM74611 C001_SNVS903.gif Figure 2. Power Dissipation Over Temperature