SBOS685C April   2014  – July 2015 TMP007

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Spectral Responsivity
      2. 7.3.2 Field of View and Angular Response
      3. 7.3.3 Thermopile Principles and Operation
      4. 7.3.4 Object Temperature Calculation
      5. 7.3.5 Calibration
      6. 7.3.6 Sensor Voltage Format
      7. 7.3.7 Temperature Format
      8. 7.3.8 Serial Interface
        1. 7.3.8.1  Bus Overview
        2. 7.3.8.2  Serial Bus Address
        3. 7.3.8.3  Writing and Reading Operations
        4. 7.3.8.4  Slave Mode Operations
          1. 7.3.8.4.1 Slave Receiver Mode
          2. 7.3.8.4.2 Slave Transmitter Mode:
        5. 7.3.8.5  SMBus Alert Function
        6. 7.3.8.6  General Call
        7. 7.3.8.7  High-Speed (Hs) Mode
        8. 7.3.8.8  Timeout Function
        9. 7.3.8.9  Two-Wire Timing
        10. 7.3.8.10 Two-Wire Timing Diagrams
    4. 7.4 Device Functional Modes
      1. 7.4.1 Temperature Transient Correction
      2. 7.4.2 Alert Modes: Interupt (INT) and Comparator (COMP)
        1. 7.4.2.1 INT Mode (INT/COMP = 0)
        2. 7.4.2.2 COMP Mode (INT/COMP = 1)
      3. 7.4.3 Nonvolatile Memory Description
        1. 7.4.3.1 Programming the Nonvolatile Memory
        2. 7.4.3.2 Memory Store and Register Load From Memory
    5. 7.5 Register Maps
      1. 7.5.1  Sensor Voltage Result Register (address = 00h) [reset = 0000h]
      2. 7.5.2  TDIE Local Temperature Result Register (address = 01h) [reset = 0000h]
      3. 7.5.3  Configuration Register (address = 02h) [reset = 1440h]
      4. 7.5.4  TOBJ Object Temperature Result Register (address = 03h) [reset = 0000h]
      5. 7.5.5  Status Register (address = 04h) [reset = 0000h]
      6. 7.5.6  Status Mask and Enable Register (address = 05h) [reset = 0000h]
      7. 7.5.7  TOBJ Object Temperature High-Limit Register (address = 06h) [reset = 7FC0h]
      8. 7.5.8  TOBJ Object Temperature Low-Limit Register (address = 07h) [reset = 8000h]
      9. 7.5.9  TDIE Local Temperature High-Limit Register (address = 08h) [reset = 7FC0h]
      10. 7.5.10 TDIE Local Temperature Low-Limit Register (address = 09h) [reset = 8000h]
      11. 7.5.11 Coefficient Registers
        1. 7.5.11.1 S0 Coefficient Register (address = 0Ah) [reset = 260Eh]
        2. 7.5.11.2 A1 Coefficient Register (address = 0Bh) [reset = 0106h]
        3. 7.5.11.3 A2 Coefficient Register (address = 0Ch) [reset = FF9Bh]
        4. 7.5.11.4 B0 Coefficient Register (address = 0Dh) [reset = FF3Ah]
        5. 7.5.11.5 B1 Coefficient Register (address = 0Eh) [reset = FF71h]
        6. 7.5.11.6 B2 Coefficient Register (address = 0Fh) [reset = 0553h]
        7. 7.5.11.7 C2 Coefficient Register (address = 10h) [reset = 0000h]
        8. 7.5.11.8 TC0 Coefficient Register (address = 11h) [reset = 0034h]
        9. 7.5.11.9 TC1 Coefficient Register (address = 12h) [reset = 0000h]
      12. 7.5.12 Manufacturer ID Register (address = 1Eh) [reset = 5449h]
      13. 7.5.13 Device ID Register (address = 1Fh) [reset = 0078h]
      14. 7.5.14 Memory Access Register (address = 2Ah) [reset = 0000h]
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Wide-Range Calibration Example: TOBJ = 0°C to 60°C, Common Versus Unit Calibration
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Wide-Range Calibration
          2. 8.2.1.2.2 Verifying the Calibration
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Narrow-Range Calibration Example: TOBJ = 33°C to 41°C, Unit vs Common Calibration
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Narrow-Range Calibration
          2. 8.2.2.2.2 Verifying the Calibration
        3. 8.2.2.3 Application Curves
    3. 8.3 System Examples
      1. 8.3.1 Use of NEP, NETD, and Responsivity in Estimating System Performance
  9. 9 Power-Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Voltage Supply voltage, VS 7 V
Input voltage ADR1 VS + 0.5 V
All other pins –0.5 +7 V
Current Input current, any pin 10 mA
Temperature Operating range –40 +125 °C
Junction, TJ 125 °C
Storage, Tstg –65 +125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input voltage rating applies to all TMP007 input voltages.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
Machine model ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage, VS 2.5 3.3 5.5 V
Operating temperature range –40 +125 °C
Die temperature, TDIE 125 °C
Object temperature, TOBJ See note (1) °C
(1) Object temperature is application dependent.

6.4 Thermal Information

THERMAL METRIC(1) TMP007 UNIT
YZF (DSBGA)
8 PINS
RθJA Junction-to-ambient thermal resistance 115.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.4 °C/W
RθJB Junction-to-board thermal resistance 14.3 °C/W
ψJT Junction-to-top characterization parameter 3.8 °C/W
ψJB Junction-to-board characterization parameter 14.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

at TDIE = 25°C, and V+ = +3.3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DEVICE PERFORMANCE
Responsivity (signal) TDIE = 0°C to 100°C, TOBJ = 0°C to 60°C 9 V/W
Sensor noise 1-s conversion, TDIE = 0°C to 60°C, TOBJ = 0°C to 60°C 300 nVrms
Noise equivalent power (NEP) At 1 σ, TDIE = 0°C to 60°C, TOBJ = 0°C to 60°C 32 nW
Noise equivalent temperature difference(1)(NETD) TDIE = 0°C to 60°C, TOBJ = 0°C to 60°C 90 mK
Noise equivalent temperature difference (NETD) At F/1 (6 σ), TDIE = 25°C, TOBJ = 0°C to 60°C 1.4 °C
Absorber size 330 × 330 μm
REFERENCE SYSTEM PERFORMANCE(1)
Object temperature accuracy(1) (error) TDIE = 20°C to 40°C, TOBJ = 20°C to 60°C ±1 ±3 °C
TDIE = 0°C to 60°C, TOBJ = –15°C to 85°C ±2 ±5 °C
TEMPERATURE MEASUREMENT
TDIE Die temperature range –40 +125 °C
TDIE accuracy (error) ±0.5 ±1 °C
Accuracy vs supply ±0.1 ±0.2 °C/V
Conversion time 0.25 Second
Temperature resolution (object and local) 0.03125 °C/LSB
Field of view (50% responsivity, full angle) 90 Degrees
DIGITAL PINS
VIH High-level input voltage 1.4 V
VIL  Low-level input voltage 0.4 V
Hysteresis 200 mV
VOL Low-level output voltage, SDA IOUT = –6 mA 0.05 0.4 V
Output ALERT logic low sink IOUT = –6 mA 0.200 V
IIN  Input current 0 V < VIN < 5.5 V –1 +1 µA
Input capacitance  3 pF
SMBus frequency 0.01 2.5 MHz
Timeout time 25 28 35 ms
POWER SUPPLY
V+ Operating supply range 2.5 5.5 V
POR Power-on reset 1.9 V
Nonvolatile memory programming voltage 2.5 5.5 V
Nonvolatile memory programming current Supply current pulse time < 3 ms 2.8 mA
IQ Quiescent current Serial bus inactive, continuous conversion 270 350 µA
Low power conversion, serial bus inactive, CR2 = 1, CR1 = x, CR0 = 1 85(2) µA
Low power conversion serial bus active, CR2 = 1, CR1 = 1, CR0 = 0 60(2) µA
ISD Shutdown current Serial bus inactive 2 4 µA
Serial bus active, 400 kHz 36 µA
(1) This parameter is tested in a fully-settled setup with no transients, in front of a black body, ε = 0.95, field of view (FOV) = 110°, with the recommended layout , and after system calibration with a common set of coefficients loaded.
(2) Average current over complete measurement cycle.

6.6 Typical Characteristics

at TDIE = 25°C, and V+ = +3.3 V (unless otherwise noted)
TMP007 C005_SBOS685.png
Figure 1. Relative Spectral Response vs Wavelength
TMP007 C007_SBOS685.png

INDENT:

NOTE: The responsivity is the slope of the lines.
Figure 3. Sensor Voltage vs IR Power Over TDIE
TMP007 C010_SBOS685.png
Figure 5. NEP vs TOBJ and TDIE
TMP007 C012_SBOS685.png

NOTE:

NOTE: In the last three conversion modes, there is a change in sensor voltage, and a different set of calibration coefficients may be needed depending on the accuracy required.
Figure 7. Sensor Noise at TDIE = 25°C and 75°C vs Sample Time
TMP007 C014_SBOS685.png
2.5 V < VS < 5.5 V
Figure 9. TDIE PSRR vs TDIE
TMP007 C018_SBOS685.png
Figure 11. Accuracy with Common Calibration (0°C to 60°C)
TMP007 C037_SBOS685.png
Figure 13. Output Pin Voltage vs Current
TMP007 C039_SBOS685.png
Figure 15. Supply Current vs TDIE (Continuous Conversion)
TMP007 C001_SBOS685.png
Figure 2. Responsivity vs Angle
TMP007 C008_SBOS685.png
Figure 4. Sensor Noise vs TOBJ and TDIE
TMP007 C011_SBOS685.png
Figure 6. NETD for Reference System at F/1 Over TDIE
TMP007 C013_SBOS685.png
Figure 8. TDIE Accuracy
TMP007 C017_SBOS685.png
Figure 10. Accuracy with Unit Calibration (0°C to 60°C)
TMP007 C036_SBOS685.png
Figure 12. POR Voltage vs TDIE
TMP007 C038_SBOS685.png
Figure 14. ShutDown Current vs TDIE
TMP007 C040_SBOS685.png
Figure 16. Conversion Frequency Stability vs TDIE