SLVS787A May   2009  – June 2015 TMP816

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  6. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Speed Control
      2. 6.3.2 Soft-Start
      3. 6.3.3 Lock Detection
      4. 6.3.4 Current Limit
      5. 6.3.5 Speed Output
      6. 6.3.6 Drive Frequency Selection
    4. 6.4 Device Functional Modes
  7. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
  8. 8 Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Community Resources
    2. 10.2 Trademarks
    3. 10.3 Electrostatic Discharge Caution
    4. 10.4 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage 18 V
VOUT Output voltage OUT1P, OUT1N, OUT2P, OUT2N 18
IOUT Continuous output current OUT1P, OUT1N, OUT2P, OUT2N 50 mA
IHB Continuous output current HB 10
VTH Input voltage VTH 8
VRD
VFG		 Output voltage RD, FG 18 V
IRD
IFG		 Continuous output current RD, FG 10 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

TA = 25°C
MIN MAX UNIT
VCC Supply voltage 6 16 V
VTH VTH input voltage Full-speed mode 0 7 V
VICM Hall input common phase input voltage 0.2 3 V
TA Operating free-air temperature –30 95 °C

5.4 Thermal Information

THERMAL METRIC(1) TMP816 UNIT
PW (TSSOP)
20 PINS
RθJA Junction-to-ambient thermal resistance 83 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 90.6 °C/W
RθJB Junction-to-board thermal resistance 42.1 °C/W
ψJT Junction-to-top characterization parameter 24.3 °C/W
ψJB Junction-to-board characterization parameter 0.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 51.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

5.5 Electrical Characteristics

VCC = 12 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V6VREG Output voltage 6VREG IHB = 5 mA 5.8 6 6.15 V
VCRH High-level output voltage CPWM 4.35 4.55 4.75 V
VCRL Low-level output voltage 1.45 1.65 1.85 V
fPWM Oscillation frequency CP = 100 pF 18 25 32 kHz
VCTH High-level output voltage CT 3.4 3.6 3.8 V
VCTL Low-level output voltage 1.4 1.6 1.8 V
ICT1 Charge current 1.6 2 2.5 μA
ICT2 Discharge current 0.16 0.2 0.28 μA
RCT Charge/discharge current ratio 8 10 12
VON Output voltage OUT_N IO = 20 mA 4 10 V
IOP Sink current OUT_P 15 20 mA
VHN Hall input sensitivity H+, H- Zero peak value
(including offset and hysteresis)		 10 20 mV
VRD
VFG		 Low-level output voltage RD, FG IRD = 5 mA or IFG = 5 mA 0.15 0.3 V
IRDL
IFGL		 Output leakage current VRD = 16 V or VFG = 16 V 30 μA
ISS Discharge current SS VSS = 1 V 0.4 0.5 0.6 μA
ICC Supply current During drive 4 10 14 mA
During lock protection 4 10 14

5.6 Typical Characteristics

TMP816 D001_SLVS787.gif
Figure 1. 6VREGOUT Load Regulation