SLVS788D February   2009  – November 2016 TPS22951

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Limit
      2. 8.3.2 Power Good Indication
      3. 8.3.3 EN and DET inputs
      4. 8.3.4 Thermal Shutdown
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC (2) Supply voltage –0.3 6 V
VO(PWR) (2) Output voltage –0.3 VCC + 0.3 V
VI(EN), VI(DET) Input voltage –0.3 6 V
VO(PG) Voltage –0.3 6 V
IO(PWR) Continuous output current Internally limited
Continuous total power dissipation See the Thermal Information section
Lead temperature soldering 1,6 mm (1/16 in) from case for 10 s –0.3 6 V
TJ Operating virtual junction temperature –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) 1000
Machine model (MM) 400
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VCC Supply voltage 2.2 5.3 V
VI(EN), VI(DET) Input voltage 0 VCC V
IO(PWR) Continuous output current 0 –600 mA
TJ Operating virtual junction temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC (1) TPS22951 UNIT
YFP (DSBGA)
6 PINS
RθJA Junction-to-ambient thermal resistance 125.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 1.4 °C/W
RθJB Junction-to-board thermal resistance 26 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 26 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating –40°C ≤ TJ ≤ +85°C range (unless otherwise noted)
PARAMETER TEST CONDITIONS (1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source ON-state resistance, 3-V operation VCC = 3 V, IO = 0.3 A 1 Ω
Leakage current PWR connected to GND, VI(EN) = 0 V 1 μA
EN AND DET
VIH High-level input voltage 2.8 V ≤ VCC ≤ 5.3 V 1.35 V
VIL Low-level input voltage 2.8 V ≤ VCC ≤ 5.3 V 0.45 V
II Input current VI(EN) or VI(DET) = 0 V or 5.3 V 1 μA
CURRENT LIMIT
IOS Short-circuit output current VCC = 2.8 V or 5.3 V, PWR connected to GND,
Device enabled into short circuit		 –0.3 –0.6 A
SUPPLY CURRENT
Supply current, enabled No load on PWR, VCC = 5.3 V, VI(EN) = VCC,
VI(DET) = VCC or 0 V		 100 μA
Supply current, disabled No load on PWR, VCC = 5.3 V, VI(EN) = 0 V,
VI(DET) = VCC or 0 V		 10 μA
PG
VOL(PG) Power Good output low voltage I(PG) = 1 mA 0.4 V
OFF-state current V(PG) = 5.3 V 1 μA
THERMAL SHUTDOWN
Thermal shutdown threshold (2) 135 °C
Recovery from thermal shutdown (2) 125 °C
Hysteresis (2) 25 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) Not tested in production, specified by design

6.6 Timing Requirements

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
tsu Setup time, DET low before EN high 2 μs

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
tr (2) Rise time, output VCC = 5.3 V CL = 1 μF,
RL = 20 Ω		 TJ = 25°C 41 μs
VCC = 2.8 V 6
tf (2) Fall time, output VCC = 5.3 V CL = 1 μF,
RL = 20 Ω		 TJ = 25°C 43 μs
VCC = 2.8 V 43
EN AND DET
ton (2) Turnon time (EN to PWR) VCC = 5.3 V CL = 1 μF, RL = 20 Ω 42 μs
Turnon time (EN to PG) CP = 15 pF, RP = 10 kΩ 9.5
toff (2) Turnoff time (EN to PWR) VCC = 5.3 V CL = 1 μF, RL = 20 Ω 48 μs
Turnoff time (EN to PG) CP = 15 pF, RP = 10 kΩ 47

6.8 Typical Characteristics

TPS22951 g_ron_vcc_lvs788.gif Figure 1. ON-State Resistance vs VCC
TPS22951 g_icc_vcc_gnd_lvs788.gif Figure 3. ICC vs VCC, EN = GND
TPS22951 g_tontoff_ta_lvs788.gif Figure 5. tON/tOFF vs Temperature, VCC = 5.3 V
TPS22951 g_flshrtcirtransresp_lvs788.gif Figure 7. Full-Load to Short-Circuit Transient Response
TPS22951 g_nold_shrtcirtransresp_lvs788.gif Figure 9. No-Load to Short-Circuit Transient Response
TPS22951 g_icc_vcc_lvs788.gif Figure 2. ICC vs VCC, EN = VCC
TPS22951 g_trtf_ta_lvs788.gif Figure 4. trise/tfall vs Temperature, VCC = 5.3 V
TPS22951 g_devenshrtcir_lvs788.gif Figure 6. Device Enabled into Short-Circuit
TPS22951 g_shrtcir_floadrecresp_lvs788.gif Figure 8. Short-Circuit to Full-Load Recovery Response