SLVSH34A September   2023  – November 2023 TPS22999

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics (VBIAS = 5.5 V)
    6. 5.6  Electrical Characteristics (VBIAS = 3.4 V)
    7. 5.7  Electrical Characteristics (VBIAS = 2.3 V)
    8. 5.8  Switching Characteristics
    9. 5.9  Timing Diagrams
    10. 5.10 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 ON and OFF Control
      2. 6.3.2 Regulated Inrush Current
      3. 6.3.3 Integrated Quick Output Discharge
      4. 6.3.4 Thermal Shutdown
      5. 6.3.5 Power-Good (PG) Signal
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1.     44

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YCH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.