SLUSBT2A January   2014  – August 2014 TPS51604-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
    7. 6.7 Typical Power Block MOSFET Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 UVLO Protection
      2. 7.3.2 PWM Pin
      3. 7.3.3 SKIP Pin
        1. 7.3.3.1 Zero Crossing (ZX) Operation
      4. 7.3.4 Adaptive Dead-Time Control and Shoot-Through Protection
      5. 7.3.5 Integrated Boost-Switch
  8. 8 Layout
    1. 8.1 Layout Guidelines
  9. 9 Device and Documentation Support
    1. 9.1 Trademarks
    2. 9.2 Electrostatic Discharge Caution
    3. 9.3 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature (unless otherwise noted)
MIN MAX UNIT
Input voltage VDD –0.3 6 V
PWM, SKIP –0.3 6
Output voltage BST –0.3 35 V
BST (transient <20 ns) –0.3 38
BST to SW; DRVH to SW –0.3 6
SW –2 30
DRVH, SW (transient <20 ns) –5 38
DRVL –0.3 6
Ground pins GND to PAD –0.3 0.3 V
Operating junction temperature, TJ –40 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –55 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) –2 2 kV
Charged device model (CDM), per AEC Q100-011 –750 750 V
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Input voltage VDD 4.5 5 5.5 V
PWM, SKIP –0.1 5.5
Output voltage BST –0.1 34 V
BST to SW; DRVH to SW –0.1 5.5
SW –1 28
DRVL –0.1 5.5
Ground pins GND to PAD –0.1 0.1 V
Operating junction temperature, TJ –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS51604-Q1 UNIT
WSON (DSG)
(8 PINS)
RθJA Junction-to-ambient thermal resistance 63.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 74.1
RθJB Junction-to-board thermal resistance 34.3
ψJT Junction-to-top characterization parameter 2.0
ψJB Junction-to-board characterization parameter 34.9
RθJC(bot) Junction-to-case (bottom) thermal resistance 11.7
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

These specifications apply for TJ = –40°C to 125°C and VDD = 5 V unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDD INPUT SUPPLY
ICC Supply current (operating) VSKIP = VVDD or VSKIP = 0 V, PWM = High 160 600 µA
VSKIP = VVDD or VSKIP = 0 V, PWM = Low 250
VSKIP = VVDD or VSKIP = 0 V, PWM = Float 130
VSKIP = Float 8
VDD UNDERVOLTAGE LOCKOUT (UVLO)
VUVLO UVLO threshold Rising threshold 4.15 V
Falling threshold 3.7
VUVHYS UVLO hysteresis 0.2 V
PWM AND SKIP I/O SPECIFICATIONS
RI Input impedance Pullup to VDD 1.7 MΩ
Pulldown (to GND) 800 kΩ
VIL Low-level input voltage 0.6 V
VIH High-level input voltage 2.65
VIHH Hysteresis 0.2
VTS Tri-state voltage 1.3 2.0
tTHOLD(off1) Tri-state activation time (falling) PWM 60 ns
tTHOLD(off2) Tri-state activation time (rising) PWM 60
tTSKF Tri-state activation time (falling) SKIP 1 µs
tTSKR Tri-state activation time (rising) SKIP 1
t3RD(PWM) Tri-state exit time PWM 100 ns
t3RD(SKIP) Tri-state exit time SKIP 50 µs
HIGH-SIDE GATE DRIVER (DRVH)
tR(DRVH) Rise time DRVH rising, CDRVH = 3.3 nF; 20% to 80% 30 ns
tRPD(DRVH) Rise time propogation delay CDRVH = 3.3 nF 40 ns
RSRC Source resistance Source resistance, (VBST– VSW) = 5 V, high state, (VBST – VDRVH) = 0.1 V 4 8 Ω
tF(DRVH) Fall time DRVH falling, CDRVH = 3.3 nF 8 ns
tFPD(DRVH) Fall-time propagation delay CDRVH = 3.3 nF 25 ns
RSNK Sink resistance Sink resistance, (VBST – VSW) forced to 5 V, low state (VDRVH – VSW) = 0.1 V 0.5 1.6 Ω
RDRVH DRVH to SW resistance(1) 100 kΩ
LOW-SIDE GATE DRIVER (DRVL)
tR(DRVL) Rise time DRVL rising, CDRVL = 3.3 nF; 20% to 80% 15 ns
tRPD(DRVL) Rise time propagation delay CDRVL = 3.3 nF 35 ns
RSRC Source resistance Source resistance, (VVDD–GND) = 5 V, high state, (VVDD – VDRVL) = 0.1 V 1.5 3 Ω
tF(DRVL) Fall time DRVL falling, CDRVL = 3.3 nF 10 ns
tFPD(DRVL) Fall-time propagation delay CDRVL= 3.3 nF 15 ns
RSNK Sink resistance Sink resistance, (VVDD– GND) = 5 V, low state, (VDRVL – GND) = 0.1 V 0.4 1.6 Ω
RDRVL DRVL to GND resistance(1) 100 kΩ
GATE DRIVER DEAD-TIME
tR(DT) Rising edge 0 20 35 ns
tF(DT) Falling edge 0 10 25 ns
ZERO CROSSING COMPARATOR
VZX Zero crossing offset SW voltage rising –2.25 0 2.00 mV
BOOTSTRAP SWITCH
VFBST Forward voltage IF = 10 mA 120 240 mV
IRLEAK Reverse leakage (VBST – VVDD) = 25 V 2 µA
RDS(on) On-resistance 12 24 Ω
(1) Specified by design. Not production tested.

6.6 Typical Characteristics

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Figure 1. PWM High to DRVL Low
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Figure 3. DRVL Low to DRVH High
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Figure 5. PWM Low to Tri-State
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Figure 7. SKIP Mode Entry
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Figure 9. Very-Low-Power Mode Entry
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Figure 11. SW Node-Ringing at VIN = 8 V
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Figure 2. PWM Low to DRVH Low
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Figure 4. DRVH Low DRVL High
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Figure 6. PWM Tri-State to Low
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Figure 8. SKIP Mode Exit
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Figure 10. Very-Low-Power Mode Exit
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Figure 12. SW Node-Ringing at VIN = 20 V

6.7 Typical Power Block MOSFET Characteristics

Power block MOSFET: CSD87330 (SLPS284), Inductor: 0.22 µF, 1.1-mΩ DCR
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Figure 13. Efficiency vs Output Current, SKIP = High
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Figure 14. Efficiency vs Output Current, SKIP = Low