SNVSA76B March 2015 – March 2017 TPS61177A
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage(2) | VINB | –0.3 | 26.4 | V |
LXB, VLED, CS1, CS2, CS3, CS4, CS5, CS6 | –0.3 | 40 | ||
ENB, PWMB | –0.3 | 30 | ||
SDA, SCL, VCC | –0.3 | 3.6 | ||
Continuous power dissipation | See Thermal Information | °C | ||
Operating junction temperature | –40 | 150 | ||
Storage temperature, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input voltage | 2.5 | 24 | V |
VOUT | Output voltage | VIN + 2 | 39 | |
FPWM_I | PWM input signal frequency | 0.1 | 25 | kHz |
DMIN_I | PWM input signal minimum duty cycle | 1% | ||
FBOOST | Boost regulator switching frequency | 450 | 1200 | kHz |
TA | Operating free-air temperature | –40 | 85 | °C |
TJ | Operating junction temperature | –40 | 125 |
THERMAL METRIC(1) | TPS61177A | UNIT | |
---|---|---|---|
RGR (VQFN) | |||
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 34.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 46.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 12.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 12.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.0 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
VINB | Input voltage range | 2.5 | 24 | V | ||
Iq_VINB | Operating quiescent current into VIN | Device enable, no switching and no load, VINB = 12 V |
3.5 | mA | ||
ISD | Shutdown current | VINB = 12 V, EN = low | 10 | µA | ||
VINB = 24 V, EN = low | 15 | |||||
VINB_UVLO | VINB undervoltage lockout threshold, voltage ramp up |
UVLO = 000 | 2.1 | 2.25 | 2.4 | V |
UVLO = 001 | 2.4 | 2.55 | 2.7 | |||
UVLO = 010 | 2.8 | 3 | 3.2 | |||
UVLO = 011 | 3.3 | 3.5 | 3.7 | |||
Other case | 3.8 | 4 | 4.2 | |||
VIN_Hys | VIN undervoltage lockout hysteresis | 200 | mV | |||
BOOST OUTPUT REGULATION | ||||||
VCS | CS voltage regulation | 500 | 600 | mV | ||
RDS(ON) | Switch FET on-resistance | VIN = 12 V | 0.20 | 0.35 | Ω | |
VIN = 3.3 V | 0.30 | 0.40 | ||||
ILIM | Switching MOSFET current limit | D = Dmax | 1.8 | 2.2 | 2.6 | A |
ILEAK_LX | Switch FET leakage current | VSW = 40 V | 5 | µA | ||
FLX | Switching frequency | FREQ = 00 | 0.36 | 0.45 | 0.54 | MHz |
FREQ = 01 | 0.48 | 0.6 | 0.72 | |||
FREQ = 10 | 0.64 | 0.8 | 0.96 | |||
FREQ = 11 | 0.96 | 1.2 | 1.44 | |||
DMAX | Maximum duty cycle | FLX = 0.8 MHz | 90% | 95% | ||
TF | Slew rate of switching FET ON | SR = 00 | 4.6 | V/ns | ||
SR = 01 | 3.5 | |||||
SR = 10 | 2.5 | |||||
SR = 11 | 1.3 | |||||
CS CURRENT REGULATION | ||||||
ICS | CSn current (See Figure 23) |
ICS = 0000 | 15 | mA | ||
ICS = 0001 | 16 | |||||
… | … | |||||
ICS = 1111 | 30 | |||||
ICSA | CSn current accuracy (ICSn – 20 mA × DPWM_I)/20 mA x DPWM_I |
ICS = 20 mA, MODE = 00 and 01 DPWM_I = 100%, TA = 25°C |
–3% | 3% | ||
ICS = 20 mA, MODE = 01 DPWM_I = 255/1023, TA = 25°C |
–3% | 3% | ||||
ICS = 20 mA, MODE = 10, DPWM_I = 255/1023, TA = 25°C |
–3% | 3% | ||||
ICS = 20 mA, MODE = 10, DPWM_I = 51/1023, TA = 25°C |
–5% | 5% | ||||
ICS = 20 mA, MODE = 10, DPWM_I = 10/1023, TA = 25°C |
–8% | 8% | ||||
ICSM | Current matching (ICSn – IAVG)/IAVG | ICS = 20 mA, MODE = 00 and 01, DPWM_I = 100%, TA = 25°C |
–2% | 2% | ||
ICS = 20 mA, MODE = 01, DPWM_I = 255/1023, TA = 25°C |
–2% | 2% | ||||
ICS = 20 mA, MODE = 10, DPWM_I = 255/1023, TA = 25°C |
–2% | 2% | ||||
ICS = 20 mA, MODE = 10, DPWM_I = 51/1023, TA = 25°C |
–5% | -5% | ||||
ICS = 20 mA, MODE = 10, DPWM_I = 10/1023, TA = 25°C |
–5% | 5% | ||||
DC dimming resolution steps | MODE = 01 and 10, FPWM_I = 0.1 to 5 kHz | 1024 | ||||
MODE = 01 and 10, FPWM_I = 5 to 10 kHz | 512 | |||||
MODE = 01 and 10, FPWM_I = 10 to 25 kHz | 256 | |||||
Brightness response time | DPWM_I 10% to 90% MODE = mixed and DC, FPWM_I = 25 kHz |
400 | μs | |||
DPWM_I 10% to 90% MODE = mixed and DC, FPWM_I = 100 Hz |
10.4 | ms | ||||
ICSLK | CSn leakage current | VCS = 40 V | 5 | μA | ||
ICSIR | CSn current inrush | 10% | ||||
tMP | Minimum dimming pulse | MODE = 00 | 400 | ns | ||
tDEG | Deglitch pulse width | 125 | ns | |||
CONTROL AND PROTECTION | ||||||
VH | ENB logic high threshold | VINB = 2.7 V and 3.3 V | 1.8 | V | ||
VL | ENB logic low threshold | VINB = 2.7 V and 3.3 V | 0.5 | |||
VH | PWMB logic high threshold | VINB = 2.7 V and 3.3 V | 1.8 | |||
VL | PWMB logic low threshold | VINB = 2.7 V and 3.3 V | 0.5 | |||
RPD | Pulldown resistor on ENB | ENB = 3.3 V | 300 | 600 | 1200 | kΩ |
Pulldown resistor on PWMB | PWMB = 3.3 V | 300 | 600 | 1200 | ||
VOVP | Output overvoltage threshold | 39 | 39.5 | 40 | V | |
Tshutdown | Thermal shutdown threshold | 150 | °C | |||
Thermal shutdown hysteresis | 15 | |||||
FSAMPLE | Input sampling oscillator frequency | 22 | 25 | 29 | MHz |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
ADDR | Configuration parameters slave address | Write | 58h | |||
Read | 59h | |||||
VIL | Low level input voltage | Supply = 2.5 V, VIN falling, standard and fast modes |
0.75 | V | ||
VIH | High level input voltage | Supply = 2.5 V, VIN rising, standard and fast modes |
1.75 | V | ||
VHYS | Hysteresis | Supply = 2.5 V, applicable to fast mode only |
125 | mV | ||
VOL | Low level output voltage | Sinking 3 mA | 500 | mV | ||
CI | Input capacitance | 10 | pF | |||
ƒSCL | Clock frequency | Standard mode | 100 | kHz | ||
Fast mode | 400 | |||||
tLOW | Clock low period | Standard mode | 4.7 | µs | ||
Fast mode | 1.3 | |||||
tHIGH | Clock high period | Standard mode | 4 | µs | ||
Fast mode | 0.6 | |||||
tBUF | Bus free time between a STOP and a START condition | Standard mode | 4.7 | µs | ||
Fast mode | 1.3 | |||||
thd:STA | Hold time for a repeated START condition | Standard mode | 4 | µs | ||
Fast mode | 0.6 | |||||
tsu:STA | Set-up time for a repeated START condition | Standard mode | 4 | µs | ||
Fast mode | 0.6 | |||||
tsu:DAT | Data set-up time | Standard mode | 250 | ns | ||
Fast mode | 100 | |||||
thd:DAT | Data hold time | Standard mode | 0.05 | 3.45 | µs | |
Fast mode | 0.05 | 0.9 | ||||
tRCL1 | Rise time of SCL after a repeated START condition and after an ACK bit | Standard mode | 20+0.1CB | 1000 | ns | |
Fast mode | 20+0.1CB | 1000 | ||||
tRCL | Rise time of SCL | Standard mode | 20+0.1CB | 1000 | ns | |
Fast mode | 20+0.1CB | 300 | ||||
tFCL | Fall time of SCL | Standard mode | 20+0.1CB | 300 | ns | |
Fast mode | 20+0.1CB | 300 | ||||
tRDA | Rise time of SDA | Standard mode | 20+0.1CB | 1000 | ns | |
Fast mode | 20+0.1CB | 300 | ||||
tFDA | Fall time of SDA | Standard mode | 20+0.1CB | 300 | ns | |
Fast mode | 20+0.1CB | 300 | ||||
tsu:STO | Set-up time for STOP condition | Standard mode | 4 | µs | ||
Fast mode | 0.6 | |||||
CB | Capacitive load on SDA and SCL | Standard mode | 400 | pF | ||
Fast mode | 400 | |||||
NWRITE | Number of write cycles | 1000 | ||||
tWRITE | Write time | 100 | ms | |||
Data retention | Storage temperature = 150°C | 100,000 | hrs |
TITLE | DESCRIPTION | FIGURE |
---|---|---|
Efficiency vs PWM Duty in PWM Mode | VIN = 12 V, VOUT = 6S6P, 8S6P, 10S6P, ICS = 20 mA, L = 10 µH | Figure 1 |
Efficiency vs PWM Duty in PWM Mode | VIN = 3 V, 12 V, 21 V, VOUT = 6S6P, 8S6P, 10S6P, L = 10 µH | Figure 2 |
Efficiency vs PWM duty in Mixed Mode | VIN = 12 V, VOUT = 6S6P, 8S6P, 10S6P, ICS = 20 mA, L = 10 µH | Figure 3 |
Efficiency vs PWM duty in Mixed Mode | VIN = 3 V, 12 V, 21 V, VOUT = 6S6P, 8S6P, 10S6P, L = 10 µH | Figure 4 |
Efficiency vs PWM duty in Analog Mode | VIN = 12 V, VOUT = 6S6P, 8S6P, 10S6P, ICS = 20 mA, L = 10 µH | Figure 5 |
Efficiency vs PWM duty in Analog Mode | VIN = 3 V, 12 V, 21 V, VOUT = 6S6P, 8S6P, 10S6P, L = 10 µH | Figure 6 |
Dimming Linearity in PWM Mode | VIN = 12 V, VOUT = 10S6P , FDIM = 200 Hz and 20 kHz, L = 10 µH | Figure 7 |
Dimming Linearity in Mixed Mode | VIN = 12 V, VOUT = 10S6P , FDIM = 200 Hz and 20 kHz, L = 10 µH | Figure 8 |
Dimming linearity in Analog Mode | VIN = 12 V, VOUT = 10S6P , FDIM = 200 Hz and 20 kHz, L = 10 µH | Figure 9 |
Switch Waveform | VIN = 3 V, VOUT = 6S6P, Duty = 100%, L = 10 µH | Figure 10 |
Switch Waveform | VIN = 12 V, VOUT = 10S6P, Duty = 100%, L = 10 µH | Figure 11 |
Mixed-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 200 Hz, Duty = 50%, L = 10 µH | Figure 12 |
Mixed-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 200 Hz, Duty = 12.5%, L = 10 µH | Figure 13 |
Mixed-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 20 kHz, Duty = 12.5%, L = 10 µH | Figure 14 |
PWM-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 200 Hz, Duty = 50%, L = 10 µH | Figure 15 |
PWM-Mode Dimming Ripple | VIN = 12 V, VOUT = 10S6P, FDIM = 20 kHz, Duty = 50%, L = 10 µH | Figure 16 |
FDIM = 200 Hz | Duty = 12.5% | |
FDIM = 200 Hz | Duty = 50% | |
FDIM = 200 Hz | Duty = 50% | |
FDIM = 20 kHz | Duty = 12.5% | |
FDIM = 20 kHz | Duty = 50% | |