SLVS893F December   2008  – May 2019 TPS61500

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Switching Frequency
      2. 7.3.2 Soft Start
      3. 7.3.3 Enable and Thermal Shutdown
      4. 7.3.4 Undervoltage Lockout (UVLO)
      5. 7.3.5 Overvoltage Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Dimming Method
      2. 7.4.2 Analog Dimming Method
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Analog Dimming Method
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Programming the Overvoltage Protection
          2. 8.2.1.2.2 Programming the LED Current
          3. 8.2.1.2.3 Implementing Dimming
          4. 8.2.1.2.4 Computing the Maximum Output Current
          5. 8.2.1.2.5 Selecting the Inductor
          6. 8.2.1.2.6 Selecting the Schottky Diode
          7. 8.2.1.2.7 Selecting the Compensation Capacitor and Resistor
          8. 8.2.1.2.8 Selecting the Input and Output Capacitor
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Pure PWM Dimming Method
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Receiving Notification of Documentation Updates
      3. 11.1.3 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

FSW = 1.2 MHz (Rfreq = 80 kΩ), Vin = 3.6 V, CRTL = Vin, TA = –40°C to +85°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VIN Input voltage range 2.9 18 V
IQ Operating quiescent current into VIN Device PWM switching without load, VIN = 3.6 V 3.5 mA
ISD Shutdown current EN = GND, VIN = 3.6 V 1.5 μA
VUVLO Undervoltage lockout threshold VIN falling 2.5 2.7 V
Vhys Undervoltage lockout hysteresis 130 mV
ENABLE AND REFERENCE CONTROL
Venh EN logic high voltage VIN = 2.9 V to 18 V 1.2 V
Venl EN logic low voltage VIN = 2.9 V to 18 V 0.4 V
Ren EN pulldown resistor 400 800 1600 kΩ
Toff Shutdown delay, SS discharge EN high to low 10 ms
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 195 200 205 mV
IFB Voltage feedback input bias current 200 nA
VEA_OFF Error amplifier offset –10 0 10 mV
Isink COMP pin sink current VFB = VREF + 200 mV, VCOMP = 1 V 40 μA
Isource COMP pin source current VFB = VREF –200 mV, VCOMP = 1 V 40 μA
VCCLP COMP pin clamp voltage High clamp 3 V
Low clamp 0.75
VCTH COMP pin threshold Duty cycle = 0% 0.95 V
Gea Error amplifier transconductance 240 340 440 μmho
Rea Error amplifier output resistance 10 MΩ
fea Error amplifier crossover frequency 500 kHz
FREQUENCY
fS Oscillator frequency Rfreq = 480 kΩ
Rfreq = 80 kΩ
Rfreq = 40 kΩ 		0.16
1.0
1.76		 0.21
1.2
2.2		 0.26
1.4
2.64		 MHz
Dmax Maximum duty cycle Rfreq = 80 kΩ 89% 93%
VFREQ FREQ pin voltage 1.229 V
Tmin_on Minimum on pulse width Rfreq = 80 kΩ 60 ns
Rdim_fil Dimming filter resistance 25 kΩ
POWER SWITCH
RDS(ON) N-channel MOSFET on-resistance VIN = VGS = 3.6 V 0.13 0.25 Ω
VIN = VGS = 3 V 0.3
ILN_NFET N-channel leakage current VDS = 40 V, TA = 25°C 1 μA
OC, OVP and SS
ILIM N-Channel MOSFET current limit D = Dmax 3 3.8 5 A
ISS Soft-start bias current Vss = 0 V 6 μA
VOVP Overvoltage protection threshold 1.192 1.229 1.266 V
VOVP_hys Overvoltage protection hysteresis 40 mV
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thysteresis Thermal shutdown threshold hysteresis 15 °C