SBVS186H March   2012  – July 2021 TPS709

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Dropout Voltage
      3. 7.3.3 Undervoltage Lockout (UVLO)
      4. 7.3.4 Reverse-Current Protection
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor
      2. 8.1.2 Transient Response
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Power Dissipation
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Thermal Protection
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
        2. 11.1.1.2 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Thermal Information

THERMAL METRIC(1)TPS709UNIT
DBVDRV
5 PINS6 PINS
RθJAJunction-to-ambient thermal resistance212.173.1°C/W
RθJC(top)Junction-to-case (top) thermal resistance78.597.0°C/W
RθJBJunction-to-board thermal resistance39.542.6°C/W
ψJTJunction-to-top characterization parameter2.862.9°C/W
ψJBJunction-to-board characterization parameter38.742.9°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/A12.8°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.