SLUSCZ8 July   2017 UCC27212A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stages
      2. 7.3.2 Undervoltage Lockout (UVLO)
      3. 7.3.3 Level Shift
      4. 7.3.4 Boot Diode
      5. 7.3.5 Output Stages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Power Dissipation
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Pin Configuration and Functions

DDA Package
8-Pin SO-PowerPAD
Top View
UCC27212A-Q1 pinso_sluscz8.gif

Pin Functions

PIN TYPE DESCRIPTION
NO. NAME
2 HB P High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022 µF to 0.1 µF. The capacitor value is dependant on the gate charge of the high-side MOSFET and must also be selected based on speed and ripple criteria.
5 HI I High-side input.(1)
3 HO O High-side output. Connect to the gate of the high-side power MOSFET.
4 HS P High-side source connection. Connect to source of high-side power MOSFET. Connect the negative side of bootstrap capacitor to this pin.
6 LI I Low-side input.(1)
8 LO O Low-side output. Connect to the gate of the low-side power MOSFET.
1 VDD P Positive supply to the lower-gate driver. De-couple this pin to VSS (GND). Typical decoupling capacitor range is 0.22 µF to 4.7 µF (See (2)).
7 VSS — Negative supply terminal for the device that is generally grounded.
Pad Thermal pad(3) — Electrically referenced to VSS (GND). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance.
(1) HI or LI input is assumed to connect to a low impedance source signal. The source output impedance is assumed less than 100 Ω. If the source impedance is greater than 100 Ω, add a bypassing capacitor, each, between HI and VSS and between LI and VSS. The added capacitor value depends on the noise levels presented on the pins, typically from 1 nF to 10 nF should be effective to eliminate the possible noise effect. When noise is present on two pins, HI or LI, the effect is to cause HO and LO malfunctions to have wrong logic outputs.
(2) For cold temperature applications TI recommends the upper capacitance range. Follow the for PCB layout.
(3) The thermal pad is not directly connected to any leads of the package; however, it is electrically and thermally connected to the substrate which is the ground of the device.