SLUSDR3B June   2019  – February 2024 UCC5390-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Function
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications for DWV Package
    7. 5.7  Safety-Related Certifications For DWV Package
    8. 5.8  Safety Limiting Values
    9. 5.9  Electrical Characteristics
    10. 5.10 Switching Characteristics
    11. 5.11 Insulation Characteristics Curves
    12. 5.12 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay, Inverting, and Noninverting Configuration
      1. 6.1.1 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supply
      2. 7.3.2 Input Stage
      3. 7.3.3 Output Stage
      4. 7.3.4 Protection Features
        1. 7.3.4.1 Undervoltage Lockout (UVLO)
        2. 7.3.4.2 Active Pulldown
        3. 7.3.4.3 Short-Circuit Clamping
    4. 7.4 Device Functional Modes
      1. 7.4.1 ESD Structure
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Designing IN+ and IN– Input Filter
        2. 8.2.2.2 Gate-Driver Output Resistor
        3. 8.2.2.3 Estimate Gate-Driver Power Loss
        4. 8.2.2.4 Estimating Junction Temperature
      3. 8.2.3 Selecting VCC1 and VCC2 Capacitors
        1. 8.2.3.1 Selecting a VCC1 Capacitor
        2. 8.2.3.2 Selecting a VCC2 Capacitor
        3. 8.2.3.3 Application Circuits With Output Stage Negative Bias
      4. 8.2.4 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 PCB Material
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Certifications
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Pin Configuration and Function

GUID-B5522B11-F400-4BF0-A8E0-4E911D2FA007-low.svg Figure 4-1 UCC5390-Q1 8-Pin SOICTop View
Table 4-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO.
GND1 4 G Input ground. All signals on the input side are referenced to this ground.
GND2 7 G Gate-drive common pin. Connect this pin to the IGBT emitter or MOSFET source. UVLO referenced to GND2.
IN+ 2 I Noninverting gate-drive voltage-control input. The IN+ pin has a CMOS input threshold. This pin is pulled low internally if left open. Use Function Table to understand the input and output logic of these devices.
IN– 3 I Inverting gate-drive voltage control input. The IN– pin has a CMOS input threshold. This pin is pulled high internally if left open. Use Function Table to understand the input and output logic of these devices.
OUT 6 O Gate-drive output
VCC1 1 P Input supply voltage. Connect a locally decoupled capacitor to GND1. Use a low-ESR or ESL capacitor located as close to the device as possible.
VCC2 5 P Positive output supply rail. Connect a locally decoupled capacitor to VEE2. Use a low-ESR or ESL capacitor located as close to the device as possible.
VEE2 8 G Negative output supply rail. Connect a locally decoupled capacitor to GND2. Use a low-ESR or ESL capacitor located as close to the device as possible.
(1) P = Power, G = Ground, I = Input, O = Output