JAJSSE0E
August 2009 – December 2023
CSD16321Q5
PRODUCTION DATA
1
1
特長
2
アプリケーション
3
概要
4
Specifications
4.1
Electrical Characteristics
4.2
Thermal Information
4.3
Typical MOSFET Characteristics
5
Device and Documentation Support
5.1
ドキュメントの更新通知を受け取る方法
5.2
サポート・リソース
5.3
Trademarks
5.4
静電気放電に関する注意事項
5.5
用語集
6
Revision History
7
Mechanical, Packaging, and Orderable Information
7.1
Package Option Addendum
7.2
Tape and Reel Information
19
パッケージ・オプション
メカニカル・データ(パッケージ|ピン)
DQH|8
MPSS011D
サーマルパッド・メカニカル・データ
発注情報
jajsse0e_oa
jajsse0e_pm
4.3
Typical MOSFET Characteristics
T
A
= 25°C (unless otherwise stated)
Figure 4-1
Transient Thermal Impedance
Figure 4-2
Saturation Characteristics
V
DS
= 12.5 V
I
D
= 25 A
Figure 4-4
Gate Charge
I
D
= 250 µA
Figure 4-6
Threshold Voltage vs Temperature
I
D
= 25 A
V
GS
= 8 V
Figure 4-8
On Resistance vs Temperature
Single pulse, max R
θJC
= 1.1°C/W
Figure 4-10
Maximum Safe Operating Area
Figure 4-12
Maximum Drain Current vs Temperature
V
DS
= 5 V
Figure 4-3
Transfer Characteristics
Figure 4-5
Capacitance
Figure 4-7
On Resistance vs Gate Voltage
Figure 4-9
Typical Diode Forward Voltage
Figure 4-11
Single Pulse Unclamped Inductive Switching