JAJSF51A April   2018  – July 2018 DRV8306

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Mode (1x PWM Mode)
        2. 8.3.1.2 Hardware Interface Mode
        3. 8.3.1.3 Gate Driver Voltage Supplies
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Gate Drive Clamp
          4. 8.3.1.4.4 Propagation Delay
          5. 8.3.1.4.5 MOSFET VDS Monitors
          6. 8.3.1.4.6 VDRAIN Sense Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pulse-by-Pulse Current Limit
      4. 8.3.4 Hall Comparators
      5. 8.3.5 FGOUT Signal
      6. 8.3.6 Pin Diagrams
      7. 8.3.7 Gate-Driver Protective Circuits
        1. 8.3.7.1 VM Supply Undervoltage Lockout (UVLO)
        2. 8.3.7.2 VCP Charge-Pump Undervoltage Lockout (CPUV)
        3. 8.3.7.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
        4. 8.3.7.4 VSENSE Overcurrent Protection (SEN_OCP)
        5. 8.3.7.5 Gate Driver Fault (GDF)
        6. 8.3.7.6 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (ENABLE Reset Pulse)
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Hall Sensor Configuration and Connection
        1. 9.1.1.1 Typical Configuration
        2. 9.1.1.2 Open Drain Configuration
        3. 9.1.1.3 Series Configuration
        4. 9.1.1.4 Parallel Configuration
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 Example
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デバイスの項目表記
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.1 Three Phase Smart Gate Drivers

The DRV8306 device integrates three, half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. A doubler charge pump provides the proper gate bias voltage to the high-side MOSFET across a wide operating voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs.

The DRV8306 device implements a smart gate-drive architecture which lets the user dynamically adjust the gate drive current (through the IDRIVE pin) without requiring external gate current limiting resistors. Additionally, this architecture provides a variety of protection features for the external MOSFETs including automatic dead-time insertion, parasitic dV/dt gate turnon prevention, and gate-fault detection.