JAJSHI4 May   2019 DRV8340-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1. Table 1. Pin Functions—DRV8340H
    2. Table 2. Pin Functions—DRV8340S
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode (PWM_MODE = 000b or MODE Pin Tied to AGND)
          2. 8.3.1.1.2 3x PWM Mode (PWM_MODE = 001b or MODE Pin = 18 kΩ to AGND)
          3. 8.3.1.1.3 1x PWM Mode (PWM_MODE = 010b or MODE Pin = 75 kΩ to AGND)
          4. 8.3.1.1.4 Independent Half-Bridge PWM Mode (PWM_MODE = 011b or MODE Pin is > 1.5 MΩ to AGND or Hi-Z)
          5. 8.3.1.1.5 Phases A and B are Independent Half-Bridges, Phase C is Independent FET (MODE = 100b)
          6. 8.3.1.1.6 Phases B and C are Independent Half-Bridges, Phase A is Independent FET (MODE = 101b or MODE Pin is 75 kΩ to DVDD)
          7. 8.3.1.1.7 Phases A is Independent Half-Bridge, Phases B and C are Independent FET (MODE = 110b or MODE Pin is 18 kΩ to DVDD)
          8. 8.3.1.1.8 Independent MOSFET Drive Mode (PWM_MODE = 111b or MODE Pin = 0.47 kΩ to DVDD)
        2. 8.3.1.2 Device Interface Modes
          1. 8.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 8.3.1.2.2 Hardware Interface
        3. 8.3.1.3 Gate Driver Voltage Supplies
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Propagation Delay
          4. 8.3.1.4.4 MOSFET VDS Monitors
          5. 8.3.1.4.5 VDRAIN Sense Pin
          6. 8.3.1.4.6 nFAULT Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Gate Driver Protective Circuits
        1. 8.3.4.1 VM Supply Undervoltage Lockout (UVLO)
        2. 8.3.4.2 VCP Charge Pump Undervoltage Lockout (CPUV)
        3. 8.3.4.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 8.3.4.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 8.3.4.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 8.3.4.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 8.3.4.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 8.3.4.4 Gate Driver Fault (GDF)
        5. 8.3.4.5 Thermal Warning (OTW)
        6. 8.3.4.6 Thermal Shutdown (OTSD)
          1. 8.3.4.6.1 Latched Shutdown (OTSD_MODE = 0b)
          2. 8.3.4.6.2 Automatic Recovery (OTSD_MODE = 1b)
        7. 8.3.4.7 Open Load Detection (OLD)
          1. 8.3.4.7.1 Open Load Detection in Passive Mode (OLP)
            1. 8.3.4.7.1.1 OLP Steps
          2. 8.3.4.7.2 Open Load Detection in Active Mode (OLA)
        8. 8.3.4.8 Offline Shorts Diagnostics
          1. 8.3.4.8.1 Offline Short-to-Supply Diagnostic (SHT_BAT)
          2. 8.3.4.8.2 Offline Short-to-Ground Diagnostic (SHT_GND)
        9. 8.3.4.9 Reverse Supply Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
          1. 8.5.1.1.1 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 FAULT Status Register (Address = 0x00) [reset = 0x00]
          1. Table 17. FAULT Status Register Field Descriptions
        2. 8.6.1.2 DIAG Status A Register (Address = 0x01) [reset = 0x00]
          1. Table 18. DIAG Status A Register Field Descriptions
        3. 8.6.1.3 DIAG Status B Register (Address = 0x02) [reset = 0x00]
          1. Table 19. DIAG Status B Register Field Descriptions
        4. 8.6.1.4 DIAG Status C Register (address = 0x03) [reset = 0x00]
          1. Table 20. DIAG Status C Register Field Descriptions
      2. 8.6.2 Control Registers
        1. 8.6.2.1  IC1 Control Register (Address = 0x04) [reset = 0x00]
          1. Table 22. IC1 Control Field Descriptions
        2. 8.6.2.2  IC2 Control Register (address = 0x05) [reset = 0x40]
          1. Table 23. IC2 Control Field Descriptions
        3. 8.6.2.3  IC3 Control Register (Address = 0x06) [reset = 0xFF]
          1. Table 24. IC3 Control Field Descriptions
        4. 8.6.2.4  IC4 Control Register (Address = 0x07) [reset = 0xFF]
          1. Table 25. IC4 Control Field Descriptions
        5. 8.6.2.5  IC5 Control Register (Address = 0x08) [reset = 0xFF]
          1. Table 26. IC5 Control Field Descriptions
        6. 8.6.2.6  IC6 Control Register (Address = 0x09) [reset = 0x99]
          1. Table 27. IC6 Control Field Descriptions
        7. 8.6.2.7  IC7 Control Register (Address = 0x0A) [reset = 0x99]
          1. Table 28. IC7 Control Field Descriptions
        8. 8.6.2.8  IC8 Control Register (Address = 0x0B) [reset = 0x99]
          1. Table 29. IC8 Control Field Descriptions
        9. 8.6.2.9  IC9 Control Register (Address = 0x0C) [reset = 0x2F]
          1. Table 30. IC9 Control Field Descriptions
        10. 8.6.2.10 IC10 Control Register (Address = 0x0D) [reset = 0x61]
          1. Table 31. IC10 Control Field Descriptions
        11. 8.6.2.11 IC11 Control Register (Address = 0x0E) [reset = 0x00]
          1. Table 32. IC11 Control Field Descriptions
        12. 8.6.2.12 IC12 Control Register (Address = 0x0F) [reset = 0x2A]
          1. Table 33. IC12 Control Field Descriptions
        13. 8.6.2.13 IC13 Control Register (Address = 0x10) [reset = 0x7F]
          1. Table 34. IC13 Control Field Descriptions
        14. 8.6.2.14 IC14 Control Register (Address = 0x10) [reset = 0x00]
          1. Table 35. IC14 Control Field Descriptions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 Example
          4. 9.2.1.2.4 Design consideration of low-side gate drive (IDRIVE, GLx, SLx)
          5. 9.2.1.2.5 External Components
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Consideration in Generator Mode
    2. 10.2 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デバイスの項目表記
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.1.1 PWM Control Modes

The DRV8340-Q1 device provides eight different PWM control modes in the SPI device and seven different modes in the H/W device to support various commutation and control methods. Texas Instruments does not recommend changing the MODE pin or PWM_MODE register during operation of the power MOSFETs. Set all INHx and INLx pins to logic low before making a MODE pin or PWM_MODE register change. Table 3 shows the different mode settings for the SPI device. The MODE bit setting of 100b is not available in the H/W device.

Table 3. 6x PWM Mode Truth Table

H/W DEVICE SPI DEVICE MODE SETTINGS
Tied to AGND 000b 6x PWM
18 kΩ to AGND 001b 3x PWM
75 kΩ to AGND 010b 1x PWM
Hi-Z 011b Independent half-bridge (for all three half-bridges)
Not Available 100b Phases A and B are independent half-bridges, Phase C is independent FET
75 kΩ to DVDD 101b Phases B and C are independent half-bridges, Phase A is independent FET
18 kΩ to DVDD 110b Phases A is independent half-bridge, Phase B and C are independent FET
0.47 kΩ to DVDD 111b Independent MOSFET (for all three half-bridges)