JAJSD22B March   2017  – December 2018 DRV8702D-Q1 , DRV8703D-Q1

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SPI Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Bridge Control
        1. 7.3.1.1 Logic Tables
      2. 7.3.2  MODE Pin
      3. 7.3.3  nFAULT Pin
      4. 7.3.4  Current Regulation
      5. 7.3.5  Amplifier Output (SO)
        1. 7.3.5.1 SO Sample and Hold Operation
      6. 7.3.6  PWM Motor Gate Drivers
        1. 7.3.6.1 Miller Charge (QGD)
      7. 7.3.7  IDRIVE Pin (DRV8702D-Q1 Only)
      8. 7.3.8  Dead Time
      9. 7.3.9  Propagation Delay
      10. 7.3.10 Overcurrent VDS Monitor
      11. 7.3.11 VDS Pin (DRV8702D-Q1 Only)
      12. 7.3.12 Charge Pump
      13. 7.3.13 Gate Drive Clamp
      14. 7.3.14 Protection Circuits
        1. 7.3.14.1 VM Undervoltage Lockout (UVLO2)
        2. 7.3.14.2 Logic Undervoltage (UVLO1)
        3. 7.3.14.3 VCP Undervoltage Lockout (CPUV)
        4. 7.3.14.4 Overcurrent Protection (OCP)
        5. 7.3.14.5 Gate Driver Fault (GDF)
        6. 7.3.14.6 Thermal Shutdown (TSD)
        7. 7.3.14.7 Watchdog Fault (WDFLT, DRV8703D-Q1 Only)
        8. 7.3.14.8 Reverse Supply Protection
      15. 7.3.15 Hardware Interface
        1. 7.3.15.1 IDRIVE (6-level input)
        2. 7.3.15.2 VDS (6-Level Input)
    4. 7.4 Device Functional Modes
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 Serial Peripheral Interface (SPI)
        2. 7.5.1.2 SPI Format
    6. 7.6 Register Maps
      1. 7.6.1 DRV8703D-Q1 Memory Map
      2. 7.6.2 Status Registers
        1. 7.6.2.1 FAULT Status Register (address = 0x00h)
          1. Table 15. FAULT Status Field Descriptions
        2. 7.6.2.2 VDS and GDF Status Register Name (address = 0x01h)
          1. Table 16. VDS and GDF Status Field Descriptions
      3. 7.6.3 Control Registers
        1. 7.6.3.1 Main Control Register Name (address = 0x02h)
          1. Table 18. Main Control Field Descriptions
        2. 7.6.3.2 IDRIVE and WD Control Register Name (address = 0x03h)
          1. Table 19. IDRIVE and WD Field Descriptions
        3. 7.6.3.3 VDS Control Register Name (address = 0x04h)
          1. Table 21. VDS Control Field Descriptions
        4. 7.6.3.4 Config Control Register Name (address = 0x05h)
          1. Table 22. Config Control Field Descriptions
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 External FET Selection
        2. 8.2.2.2 IDRIVE Configuration
        3. 8.2.2.3 VDS Configuration
        4. 8.2.2.4 Current Chopping Configuration
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 関連リンク
    3. 11.3 ドキュメントの更新通知を受け取る方法
    4. 11.4 コミュニティ・リソース
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • RHB|32
サーマルパッド・メカニカル・データ
発注情報

Dead Time

The dead time (t(DEAD)) is measured as the time when the SH pin is in the Hi-Z state between turning off one of the half-bridge FETs and turning on the other. For example, the output is Hi-Z between turning off the high-side FET and turning on the low-side FET.

The dead time consists of an inserted digital dead time and FET gate slewing. The DRV8702D-Q1 device has a digital dead time of approximately 240 ns. The DRV8703D-Q1 device has programmable dead-time options of 120, 240, 480, 960 ns. In addition to this digital dead time, the output is Hi-Z as long as the voltage across the GL pin to ground or GH pin to SH pin is less than the FET threshold voltage.

The total dead time is dependent on the IDRIVE resistor setting because a portion of the FET gate ramp (GH and GL pins) includes the observable dead time.