JAJSEW0 March   2018 LMR23615-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
      2.      効率と負荷との関係、VIN = 12V
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed-Frequency Peak-Current-Mode Control
      2. 7.3.2  Adjustable Frequency
      3. 7.3.3  Adjustable Output Voltage
      4. 7.3.4  EN/SYNC
      5. 7.3.5  VCC, UVLO
      6. 7.3.6  Minimum ON-time, Minimum OFF-time and Frequency Foldback at Dropout Conditions
      7. 7.3.7  Internal Compensation and CFF
      8. 7.3.8  Bootstrap Voltage (BOOT)
      9. 7.3.9  Overcurrent and Short-Circuit Protection
      10. 7.3.10 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Active Mode
      3. 7.4.3 CCM Mode
      4. 7.4.4 Light Load Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Output Voltage Setpoint
        3. 8.2.2.3  Switching Frequency
        4. 8.2.2.4  Inductor Selection
        5. 8.2.2.5  Output Capacitor Selection
        6. 8.2.2.6  Feed-Forward Capacitor
        7. 8.2.2.7  Input Capacitor Selection
        8. 8.2.2.8  Bootstrap Capacitor Selection
        9. 8.2.2.9  VCC Capacitor Selection
        10. 8.2.2.10 Undervoltage Lockout Setpoint
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Compact Layout for EMI Reduction
      2. 10.1.2 Ground Plane and Thermal Considerations
      3. 10.1.3 Feedback Resistors
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 開発サポート
        1. 11.1.1.1 WEBENCH®ツールによるカスタム設計
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

Limits apply over the recommended operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and Maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY (VIN PIN)
VIN Operation input voltage 4 36 V
VIN_UVLO Undervoltage lockout thresholds Rising threshold 3.3 3.7 3.9 V
Falling threshold 2.9 3.3 3.5
ISHDN Shutdown supply current VEN = 0 V, VIN = 12 V, TJ = –40°C to 125°C 2 4 μA
IQ Operating quiescent current (non-switching) VIN =12 V, VFB = 1.2 V, TJ = –40°C to 125°C 75 μA
ENABLE (EN/SYNC PIN)
VEN_H Enable rising threshold voltage 1.4 1.55 1.7 V
VEN_HYS Enable hysteresis voltage 0.4 V
VWAKE Wake-up threshold 0.4 V
IEN Input leakage current at EN pin VIN = 4 V to 36 V, VEN= 2 V 10 100 nA
VIN = 4 V to 36 V, VEN= 36 V 1 μA
VOLTAGE REFERENCE (FB PIN)
VREF Reference voltage VIN = 4 V to 36 V, TJ = 25°C 0.985 1 1.015 V
VIN = 4 V to 36 V, TJ = –40°C to 125°C 0.98 1 1.02
ILKG_FB Input leakage current at FB pin VFB= 1 V 10 nA
INTERNAL LDO (VCC PIN)
VCC Internal LDO output voltage 4.1 V
VCC_UVLO VCC undervoltage lockout thresholds Rising threshold 2.8 3.2 3.6 V
Falling threshold 2.4 2.8 3.2
CURRENT LIMIT
IHS_LIMIT Peak inductor current limit 2.9 3.9 4.9 A
ILS_LIMIT Valley inductor current limit 1.9 2.5 3.2 A
IL_ZC Zero cross current limit –0.04 A
INTEGRATED MOSFETS
RDS_ON_HS High-side MOSFET ON-resistance VIN = 12 V, IOUT = 1 A 160 mΩ
RDS_ON_LS Low-side MOSFET ON-resistance VIN = 12 V, IOUT = 1 A 95 mΩ
THERMAL SHUTDOWN
TSHDN Thermal shutdown threshold 162 170 178 °C
THYS Hysteresis 15 °C