SLLS573E December   2003  – March 2024 SN65MLVD200A , SN65MLVD202A , SN65MLVD204A , SN65MLVD205A

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Electrical Characteristics – Driver
    7. 6.7  Electrical Characteristics – Receiver
    8. 6.8  Electrical Characteristics – BUS Input and Output
    9. 6.9  Switching Characteristics – Driver
    10. 6.10 Switching Characteristics – Receiver
    11. 6.11 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-On Reset
      2. 8.3.2 ESD Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Function Tables
      2. 8.4.2 Equivalent Input and Output Schematic Diagrams
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Supply Voltage
        2. 9.2.2.2  Supply Bypass Capacitance
        3. 9.2.2.3  Driver Input Voltage
        4. 9.2.2.4  Driver Output Voltage
        5. 9.2.2.5  Termination Resistors
        6. 9.2.2.6  Receiver Input Signal
        7. 9.2.2.7  Receiver Input Threshold (Failsafe)
        8. 9.2.2.8  Receiver Output Signal
        9. 9.2.2.9  Interconnecting Media
        10. 9.2.2.10 PCB Transmission Lines
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Microstrip Versus Stripline Topologies
      2. 11.1.2 Dielectric Type and Board Construction
      3. 11.1.3 Recommended Stack Layout
      4. 11.1.4 Separation Between Traces
      5. 11.1.5 Crosstalk and Ground Bounce Minimization
      6. 11.1.6 Decoupling
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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発注情報

Dielectric Type and Board Construction

The speeds at which signals travel across the board dictates the choice of dielectric. FR-4, or equivalent, usually provides adequate performance for use with M-LVDS signals. If rise or fall times of TTL/CMOS signals are less than 500 ps, empirical results indicate that a material with a dielectric constant near 3.4, such as Rogers™ 4350 or Nelco N4000-13 is better suited. When the designer chooses the dielectric, there are several parameters pertaining to the board construction that can affect performance. The following set of guidelines were developed experimentally through several designs involving M-LVDS devices:

  • Copper weight: 15 g or ½ oz start, plated to 30 g or 1 oz
  • All exposed circuitry must be solder-plated (60/40) to 7.62 μm or 0.0003 in (minimum)
  • Copper plating must be 25.4 μm or 0.001 in (minimum) in plated-through-holes
  • Solder mask over bare copper with solder hot-air leveling