JAJSFC1C April   2005  – September 2021 SN74CBTU4411

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristic
  7. 7 Parameter Measurement Information
    1. 7.1 Enable and Disable Times
    2. 7.2 Skew and Propagation Delay Times
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 サポート・リソース
    4. 12.4 Trademarks
  13. 13Electrostatic Discharge Caution
  14. 14Glossary
  15. 15Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

Minimum and maximum limits apply for TA = 0°C to 85°C (unless otherwise noted). Typical limits apply for VDD = 1.8 V and
TA = 25°C (unless otherwise noted).(1)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VIK(2)Control inputs(3)VDD = 1.7 V, IIN = –18 mA–1.8V
VBIAS_DQSD10VDD = 1.7 V, DQS_EN = VDD1.11.275V
VOHD10VDD = 1.7 V, DQS_EN = VDD, EN = VDD, IO = 100 µA1.61.8V
IINControl inputs(3)VDD = 1.9 V, VIN = VDD or GND±1µA
IOZ(4)VDD = 1.9 V, VO = 0 to 1.9 V, VI = 0, Switch OFF, VBIAS open±10µA
ICCVDD = 1.9 V, TC = GND, EN = GND, II/O = 0, S0 or S1 input switching at 50% duty cycles, Data I/O are open0.72.5mA
EN = VDD500µA
ICCDVDD = 1.9 V, TC = GND, EN = GND, II/O = 0, S0 or S1 input switching at 50% duty cycle, Data I/O are open0.5mA/
MHz(5)
CinS portVDD = 1.9 V, TC = GND, EN = GND, VIN = VREF ± 250 mV2.53.5pF
EN, TC, DQS_EN inputsVDD = 1.9 V, VIN = 0 or 1.9 V2.5
Cio(OFF)H portVI/O = 0.5 × VDD ± 0.4 V, Switch OFF, VBIAS open2.5pF
Cio(ON)VI/O = 0.5 × VDD ± 0.4 V, Switch ON, VBIAS = GND4.6pF
ron(6)VDD = 1.7 V, VI = 0.5 × VDD ± 0.5 V, IO = 10 mA61017Ω
Δron(flat)(7)VDD = 1.7 V, DQS_EN = VDD,
IO = 10 mA		VI = 0.5 VDD ± 0.25 V1.53Ω
VI = 0.5 VDD ± 0.5 V2.55
rtermS portVDD = 1.7 V110160210Ω
rpulldownD0–D10VDD = 1.7 VDQS_EN = GND280400520Ω
D10DQS_EN = VDD, EN = GND160023003000
rpullupD10VDD = 1.7 V, DQS_EN = VDD, EN = GND70010001300Ω
(1) VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
(2) VIK refers to the clamp voltage due to the internal diode, which is connected from each control input to GND.
(3) For the leakage current test on S0 and S1, EN and TC inputs are set to low.
(4) For I/O ports, the parameter IOZ includes the input leakage current. IOZ applies only to the H port.
(5) This frequency of S0 and S1 inputs, for example, for a data I/O rate of 533 Mbit/s, with a burst of 4, the required frequency is for S0 or S1 input is ≅ 66 MHz (533/8). The total ICC due to switching S0, S1 will be approximately 27 mA (66 MHz × 0.4 mA/MHz).
(6) Measured by the voltage drop between the D and H pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (D or H) pins.
(7) Δron(flat) is the difference of maximum ron and minimum ron for a specific channel in a specific device.