JAJSE12A October   2017  – October 2017 TPS92830-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 概要(続き)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Bias
        1. 8.3.1.1 Power-On-Reset (POR)
        2. 8.3.1.2 Current Reference (IREF)
        3. 8.3.1.3 Low-Current Fault Mode
      2. 8.3.2 Charge Pump
        1. 8.3.2.1 Charge Pump Architecture
      3. 8.3.3 Constant-Current Driving
        1. 8.3.3.1 High-Side Current Sense
        2. 8.3.3.2 High-Side Current Driving
        3. 8.3.3.3 Gate Overdrive Voltage Protection
        4. 8.3.3.4 High-Precision Current Regulation
        5. 8.3.3.5 Parallel MOSFET Driving
      4. 8.3.4 PWM Dimming
        1. 8.3.4.1 Supply Dimming
        2. 8.3.4.2 PWM Dimming by Input
        3. 8.3.4.3 Internal Precision PWM Generator
        4. 8.3.4.4 Full Duty-Cycle Switch
      5. 8.3.5 Analog Dimming
        1. 8.3.5.1 Analog Dimming Topology
        2. 8.3.5.2 Internal High-Precision Pullup Current Source
      6. 8.3.6 Output Current Derating
        1. 8.3.6.1 Output-Current Derating Topology
      7. 8.3.7 Diagnostics and Fault
        1. 8.3.7.1 LED Short-to-GND Detection
        2. 8.3.7.2 LED Short-to-GND Auto Retry
        3. 8.3.7.3 LED Open-Circuit Detection
        4. 8.3.7.4 LED Open-Circuit Auto Retry
        5. 8.3.7.5 Dropout-Mode Diagnostics
        6. 8.3.7.6 Overtemperature Protection
        7. 8.3.7.7 FAULT Bus Output With One-Fails–All-Fail
        8. 8.3.7.8 Fault Table
    4. 8.4 Device Functional Modes
      1. 8.4.1 Undervoltage Lockout, V(IN) < V(UVLO)
      2. 8.4.2 Normal Operation (V(IN) ≥ 4.5 V, V(IN) > V(LED) + 0.5 V)
      3. 8.4.3 Low-Voltage Dropout
      4. 8.4.4 Fault Mode (Fault Is Detected)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for Automotive Exterior Lighting With One-Fails–All-Fail
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 High-Precision Dual-Brightness PWM Generation
        1. 9.2.2.1 Dual-Brightness Application
        2. 9.2.2.2 Design Requirements
        3. 9.2.2.3 Detailed Design Procedure
        4. 9.2.2.4 Application Curve
      3. 9.2.3 Driving High-Current LEDs With Parallel MOSFETs
        1. 9.2.3.1 Application Curves
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 コミュニティ・リソース
    3. 11.3 商標
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.2.3 Driving High-Current LEDs With Parallel MOSFETs

Thermal performance is one key consideration in automotive exterior driving, especially for a linear LED driver. Due to large variations of automotive battery voltage, a linear LED driver must accommodate thermal dissipation with a worst-case scenario, which is high ambient temperature and high battery voltage.

LED driver thermal dissipation performance merely depends on the package and PCB thermal dissipation area. However, if the thermal dissipation performance of a single MOSFET is not able to support the required LED string current, multiple MOSFETs in parallel are able to dissipate heat for high-current applications.

When a MOSFET is in the saturation region as a current-control device, its current output strongly depends on its threshold. MOSFET threshold Vth can vary from one device to another. When MOSFETs are in parallel, even a small threshold mismatch could lead to imbalance of current distribution.

With an integrated charge pump, the TPS92830-Q1 device provides sufficient headroom even when the supply voltage is as low as 5 V. Thus adding ballast resistors between the N-channel MOSFET source and the LED string introduces negative feedback for each parallel MOSFET path to balance the current flows.

Table 5. Thermal Measurement of Parallel MOSFETs

WITHOUT CURRENT BALLAST ResistorWITH 1-Ω BALLAST RESISTOR WITH 3-Ω BALLAST RESISTOR
MOSFET1 Temperature (ºC) 105.7 85.3 85.9
MOSFET2 Temperature (ºC) 76.1 82.8 84.2
MOSFET3 Temperature (ºC) 84.8 87.6 85.3

V(IN)= 16 V, I(Total) = 964 mA, TA= 25 ºC.

TPS92830-Q1 MOSFET_Parallel_Driving_Support_SLIS178.gifFigure 36. Parallel MOSFET Driving