JAJSNX8A january   2023  – april 2023 TPSF12C3-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 System Characteristics
    7. 7.7 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Active EMI Filtering
        1. 8.3.1.1 Schematics
      2. 8.3.2 Capacitive Amplification
      3. 8.3.3 Integrated Line Rejection Filter
      4. 8.3.4 Compensation
      5. 8.3.5 Remote Enable
      6. 8.3.6 Supply Voltage UVLO Protection
      7. 8.3.7 Thermal Shutdown Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – AEF Circuit for High-Density On-Board Charger (OBC) in Electric Vehicles (EVs)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Sense Capacitors
          2. 9.2.1.2.2 Inject Capacitor
          3. 9.2.1.2.3 Compensation Network
          4. 9.2.1.2.4 Injection Network
          5. 9.2.1.2.5 Surge Protection
        3. 9.2.1.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 サード・パーティ製品に関する免責事項
      2. 10.1.2 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.2.1.3 Application Curves

Unless otherwise indicated, VVDD = VEN = 12 V.

GUID-20230316-SS0I-QZDR-3TLC-NTSZPJHLWCPX-low.svg
Note: A high DM noise signature may mask improvement in CM noise performance related to AEF. A reduction of CM choke inductance may also reduce leakage inductance, which could impact DM noise attenuation. Install higher X-capacitance or a discrete DM filter inductor to manage DM attenuation as needed. Also, use a DM-CM noise splitter to isolate the CM component of the measured total noise.
Figure 9-5 EMI Mitigation Result with AEF On and Off (EN Tied High and Low)
GUID-20221222-SS0I-SM06-21XF-MLH6LR73WKPN-low.svg Figure 9-6 IEC 61000-4-5 Positive Surge, 5-kV Single Strike – 1 µs/div (a), 200 µs/div (b)
GUID-20221222-SS0I-XBBN-WSNJ-DSFCNC2HNCVW-low.svg Figure 9-7 IEC 61000-4-5 Negative Surge, 5-kV Single Strike – 1 µs/div (a), 200 µs/div (b)
GUID-20221222-SS0I-BKHH-PQSD-LF5BMDNCDHNF-low.svg Figure 9-8 IEC 61000-4-5 Surge, 5-kV Repetitive Strike at 10-Second Intervals – Positive (a), Negative (b)

Note: The surge test circuit used MOVs (Littelfuse V20E300P) connected from line and neutral filter inputs to chassis ground. See Figure 9-11.