JAJSDQ6C June 2012 – September 2017
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage range | AVDD to AVSS | –0.3 | 4.1 | V |
Any pin | –0.3 | AVDD + 0.3 | ||
Diode current at any device pin | ±2 | mA | ||
Maximum operating junction temperature, TJ max | 105 | °C | ||
Storage humidity | 10% | 90% | Rh | |
Storage temperature, Tstg | –25 | 85 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
AVDD | Supply voltage | 2 | 3.6 | V | ||
AVSS | Ground | 0 | V | |||
fCLK | External clock input frequency | 1 | MHz | |||
TA | Ambient temperature range | 0 | 70 | °C |
THERMAL METRIC(1) | AFE4300 | UNIT | |
---|---|---|---|
PN (LQFP) | |||
80 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 50.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 14.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 25.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 24.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | AFE4300 | UNIT | ||||
---|---|---|---|---|---|---|---|
MIN | TYP | MAX | |||||
BRIDGE SUPPLY | |||||||
V(VLDO) | Output voltage (bridge supply voltage) | 1.7 | V | ||||
IO | Output current | Current capability | 20 | mA | |||
Short-circuit protection | 100 | mA | |||||
tSTBY | Enable, disable time | With 470-nF capacitor on the VLDO pin | 1 | ms | |||
AMPLIFICATION CHAIN | |||||||
Offset error | With offset correction DAC disabled | 80 | µV | ||||
Offset drift vs temperature | With offset correction DAC disabled | 0.25 | µV/°C | ||||
Input bias current | ±70 | fA | |||||
Input offset current | ±140 | fA | |||||
Vn | Noise voltage, equivalent input | G1 = 183, 0.01 Hz < f < 2 Hz | 68 | nVrms | |||
In | Noise current, equivalent input | f = 10 Hz | 100 | fA/√Hz | |||
zid | Differential input impedance | 100 || 4 | GΩ || pF | ||||
zic | Common-mode input impedance | 100 || 8 | GΩ || pF | ||||
CMRR | Input common-mode rejection ratio | G1 = 183 | 95 | dB | |||
INLWS | Gain nonlinearity | From input to digital output (including ADC) |
0.01 | % of FS(1) | |||
First-stage gain equation | (1 + 2 × 100k / RG) | V/V | |||||
tup | Power-up time | From power up to valid reading | 1 | ms | |||
RFB1 | Internal feedback resistors | 95 | 100 | 105 | kΩ | ||
Gain2 | Second-stage gain settings | 1, 2, 3, 4 | |||||
Total gain error | ±5% | ||||||
Offset DAC number of bits | 6 | Bits | |||||
IDAC | Full-scale offset DAC output current | ±6.5 | µA |
PARAMETER | TEST CONDITIONS | AFE4300 | UNIT | ||||
---|---|---|---|---|---|---|---|
MIN | TYP | MAX | |||||
ANALOG-TO-DIGITAL CONVERTER | |||||||
ADC input voltage range | At the input of the ADC (after PGA) | 2 × VREF | V | ||||
VIN | Full-scale input voltage | At the input of the PGA | VADC / Gain | V | |||
VREF | Reference voltage | 1.7 | V | ||||
RON(mux) | Input multiplexer on-resistance | 0 V ≤ VAAUX ≤ AVDD | 6 | kΩ | |||
AAUX input impedance | 4 | MΩ | |||||
fDR | Output data rate | 8 | 860 | SPS | |||
Resolution | 16 | Bits | |||||
EI | Integral linearity error | Best fit, DR = 8 SPS | 1 | LSB | |||
EO | Offset error | Differential inputs | ±1 | LSB | |||
Single-ended inputs | ±3 | LSB | |||||
EG | Gain error | 0.05% | |||||
VBAT_MON | Battery monitor output | AVDD / 3 | V | ||||
IBAT_MON | Battery monitor current consumption | 1.5 | µA | ||||
IBAT_MON_ACC | Battery monitor accuracy | ±2% | |||||
POWER CONSUMPTION | |||||||
Supply current | Power-down current | 0.25 | µA | ||||
Sleep-mode current | 100 | µA | |||||
Weight-scale chain measurements | 540 | µA | |||||
Body-composition measurements | 970 | µA | |||||
Auxillary-channel measurements | 110 | µA |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
tCSSC | STE low to first SCLK setup time(1) | 100 | ns | ||
tSCLK | SCLK period | 250 | ns | ||
tSPWH | SCLK pulse duration high | 100 | ns | ||
tSPWL | SCLK pulse duration low | 100 | ns | ||
tDIST | Valid SDIN to SCLK falling edge setup time | 50 | ns | ||
tDIHD | Valid SDIN to SCLK falling edge hold time | 50 | ns | ||
tDOPD | SCLK rising edge to valid new SDOUT propagation delay(2) | 50 | ns | ||
tDOHD | SCLK rising edge to DOUT invalid hold time | 0 | ns | ||
tCSDOD | STE low to SDOUT driven propagation delay | 100 | ns | ||
tCSDOZ | STE high to SDOUT Hi-Z propagation delay | 100 | ns | ||
tCSH | STE high pulse | 200 | ns | ||
tSCCS | Final SCLK falling edge to STE high | 100 | ns |