SCLK052 February   2024 SN54SC6T06-SEP , SN54SC6T07-SEP , SN54SC6T14-SEP , SN54SC6T17-SEP

 

  1.   1
  2.   SN54SC6T07-SEP Single-Event Latch-Up (SEL) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

1 Overview

The SN54SC6T07-SEP device contains six independent buffers with open-drain outputs and extended voltage operation to allow for level translation. Each buffer performs the Boolean function Y = A in positive logic. The output level is referenced to the supply voltage (VCC) and supports 1.2V, 1.8V, 2.5V, 3.3V, and 5V CMOS levels.

The input is designed with a lower threshold circuit to support up translation for lower voltage CMOS inputs (for example 1.2V input to 1.8V output or 1.8V input to 3.3V output). Additionally, the 5V tolerant input pins enable down translation (for example, 3.3V to 2.5V output).

Table 1-1 Overview Information1
DescriptionDevice Information
TI Part NumberSN54SC6T07-SEP
MLS NumberSN54SC6T07MPWTSEP
Device FunctionRadiation Tolerant, Single Power Supply Hex Open Drain Buffer Voltage Translator
TechnologyLBC9
Exposure FacilityFacility for Rare Isotope Beams (FRIB) at Michigan State University FRIB Single Event Effects (FSEE) Facility
Heavy Ion Fluence per Run1 × 107 ions / cm2
Irradiation Temperature125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.