During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated (see Figure 3-5). The species used for SEL testing was a Xenon (¹²⁹Xe) ion at a linac energy of 25 MeV / µ with an angle-of-incidence of 0° for an LET_EFF of 43 MeV-cm² / mg. A fluence of approximately 1 × 10⁷ ions / cm² were used for the runs.

The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a Tektronix AFG3102 function generator. The run duration to achieve this fluence was approximately two minutes. As listed in Table 5-1, no SEL events were observed during the nine runs, which indicates that the SN54SC245-SEP is SEL-free. Figure 5-1, Figure 5-2 , and Figure 5-3 show the plot of current versus time for runs one, four, and seven, respectively.

Figure 5-1 Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C

Figure 5-2 Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C

Figure 5-3 Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°C

No SEL events were observed, which indicates that the SN54SC245-SEP is SEL-immune at LET_EFF = 43 MeV-cm² / mg and T = 125°C. Using the MFTF method described in SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report Table of Contents Table of Contents Trademarks Trademarks Overview Overview Single-Event Effects (SEE) Mechanisms Single-Event Effects (SEE) Mechanisms Test Device and Test Board Information Test Device and Test Board Information Irradiation Facility and Setup Irradiation Facility and Setup Results Results SEL Results SEL Results Event Rate Calculations Event Rate Calculations Summary Summary References References IMPORTANT NOTICE AND DISCLAIMER IMPORTANT NOTICE AND DISCLAIMER SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg as 125°C. SN54SC245-SEP Single-Event Latch-Up (SEL) Radiation Report The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg as 125°C. The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg as 125°C. The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg as 125°C. The purpose of this study is to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, 1.2 V to 5.5 V octal bus transceiver. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used to irradiate three production devices with a fluence of 1 × 107 ions / cm2. The results demonstrate that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV-cm2 / mg as 125°C.EFF272EFF2 Table of Contents yes yes yes Table of Contents yes yes yes yes yes yes yesyesyes Trademarks Trademarks Overview The SN54SC245-SEP is a radiation-tolerant, 1.2 V to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are controlled by the direction (DIR) pin and output enable (OE) pin. The output enable (OE) controls all outputs in the device. When the OE pin is in the low state, the appropriate outputs are enabled as determined by the direction (DIR) pin . When the OE pin is in the high state, all outputs of the device are disabled. All disabled outputs are placed into the high-impedance state. See the SN54SC245-SEP product page for more details. Overview Information lists device information. Overview Information Description Device Information TI part number SN54SC245-SEP MLS number SN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Irradiation temperature 125°C (for SEL testing) Overview The SN54SC245-SEP is a radiation-tolerant, 1.2 V to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are controlled by the direction (DIR) pin and output enable (OE) pin. The output enable (OE) controls all outputs in the device. When the OE pin is in the low state, the appropriate outputs are enabled as determined by the direction (DIR) pin . When the OE pin is in the high state, all outputs of the device are disabled. All disabled outputs are placed into the high-impedance state. See the SN54SC245-SEP product page for more details. Overview Information lists device information. Overview Information Description Device Information TI part number SN54SC245-SEP MLS number SN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Irradiation temperature 125°C (for SEL testing) The SN54SC245-SEP is a radiation-tolerant, 1.2 V to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are controlled by the direction (DIR) pin and output enable (OE) pin. The output enable (OE) controls all outputs in the device. When the OE pin is in the low state, the appropriate outputs are enabled as determined by the direction (DIR) pin . When the OE pin is in the high state, all outputs of the device are disabled. All disabled outputs are placed into the high-impedance state. See the SN54SC245-SEP product page for more details. Overview Information lists device information. Overview Information Description Device Information TI part number SN54SC245-SEP MLS number SN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Irradiation temperature 125°C (for SEL testing) The SN54SC245-SEP is a radiation-tolerant, 1.2 V to 5.5 V, octal bus transceivers with tri-state outputs. All eight channels are controlled by the direction (DIR) pin and output enable (OE) pin. The output enable (OE) controls all outputs in the device. When the OE pin is in the low state, the appropriate outputs are enabled as determined by the direction (DIR) pin . When the OE pin is in the high state, all outputs of the device are disabled. All disabled outputs are placed into the high-impedance state.OEOEOEOESee the SN54SC245-SEP product page for more details. Overview Information lists device information.product pageOverview Information Overview Information Description Device Information TI part number SN54SC245-SEP MLS number SN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Irradiation temperature 125°C (for SEL testing) Overview Information Description Device Information TI part number SN54SC245-SEP MLS number SN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Irradiation temperature 125°C (for SEL testing) Description Device Information Description Device Information DescriptionDevice Information TI part number SN54SC245-SEP MLS number SN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Irradiation temperature 125°C (for SEL testing) TI part number SN54SC245-SEP TI part numberSN54SC245-SEP MLS number SN54SC245MPWTSEP MLS numberSN54SC245MPWTSEP Device function Radiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Device functionRadiation-tolerant, 1.2-V to 5.5-V, octal bus transceivers with tri-state outputs Technology LBC9 TechnologyLBC9 Exposure facility Facility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Exposure facilityFacility for Rare Isotope Beams (FRIB) at Michigan State University (FRIB Single Event Effects [FSEE] Facility) Heavy ion fluence per run 1 × 107 ions / cm2 Heavy ion fluence per run1 × 107 ions / cm2 72 Irradiation temperature 125°C (for SEL testing) Irradiation temperature125°C (for SEL testing) Single-Event Effects (SEE) Mechanisms The primary single-event effect (SEE) event of interest in the SN54SC245-SEP is the destructive single-event latch-up. From a risk or impact perspective, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the Linear BiCMOS (LBC9) process used for SN54SC245-SEP, the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient, as the SN54SC245-SEP did not exhibit SEL with heavy-ions up to an LETEFF of 43 MeV-cm2 / mg at a fluence of 1 × 107 ions / cm2 and a chip temperature of 125°C. Functional Block Diagram of the SN54SC245-SEP Single-Event Effects (SEE) Mechanisms The primary single-event effect (SEE) event of interest in the SN54SC245-SEP is the destructive single-event latch-up. From a risk or impact perspective, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the Linear BiCMOS (LBC9) process used for SN54SC245-SEP, the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient, as the SN54SC245-SEP did not exhibit SEL with heavy-ions up to an LETEFF of 43 MeV-cm2 / mg at a fluence of 1 × 107 ions / cm2 and a chip temperature of 125°C. Functional Block Diagram of the SN54SC245-SEP The primary single-event effect (SEE) event of interest in the SN54SC245-SEP is the destructive single-event latch-up. From a risk or impact perspective, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the Linear BiCMOS (LBC9) process used for SN54SC245-SEP, the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient, as the SN54SC245-SEP did not exhibit SEL with heavy-ions up to an LETEFF of 43 MeV-cm2 / mg at a fluence of 1 × 107 ions / cm2 and a chip temperature of 125°C. Functional Block Diagram of the SN54SC245-SEP EFF272 Functional Block Diagram of the SN54SC245-SEP Functional Block Diagram of the SN54SC245-SEP Test Device and Test Board Information The SN54SC245-SEP is a packaged 20-pin, TSSOP plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion testing. shows the evaluation board used for radiation testing. shows the bias diagram used for Single-Event Latch-up (SEL) testing. SN54SC245-SEP Pinout Diagram SN54SC245-SEP with Decapped Package SN54SC245-SEP Evaluation Board (Top View) SN54SC245-SEP SEL Bias Diagram SN54SC245-SEP Thermal Image for SEL Test Device and Test Board Information The SN54SC245-SEP is a packaged 20-pin, TSSOP plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion testing. shows the evaluation board used for radiation testing. shows the bias diagram used for Single-Event Latch-up (SEL) testing. SN54SC245-SEP Pinout Diagram SN54SC245-SEP with Decapped Package SN54SC245-SEP Evaluation Board (Top View) SN54SC245-SEP SEL Bias Diagram SN54SC245-SEP Thermal Image for SEL The SN54SC245-SEP is a packaged 20-pin, TSSOP plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion testing. shows the evaluation board used for radiation testing. shows the bias diagram used for Single-Event Latch-up (SEL) testing. SN54SC245-SEP Pinout Diagram SN54SC245-SEP with Decapped Package SN54SC245-SEP Evaluation Board (Top View) SN54SC245-SEP SEL Bias Diagram SN54SC245-SEP Thermal Image for SEL The SN54SC245-SEP is a packaged 20-pin, TSSOP plastic package as shown in the pinout diagram in . shows the device with the package cap decapped to reveal the die for heavy ion testing. shows the evaluation board used for radiation testing. shows the bias diagram used for Single-Event Latch-up (SEL) testing. SN54SC245-SEP Pinout Diagram SN54SC245-SEP with Decapped Package SN54SC245-SEP Pinout Diagram SN54SC245-SEP Pinout Diagram SN54SC245-SEP with Decapped Package SN54SC245-SEP with Decapped Package SN54SC245-SEP Evaluation Board (Top View) SN54SC245-SEP SEL Bias Diagram SN54SC245-SEP Evaluation Board (Top View) SN54SC245-SEP Evaluation Board (Top View) SN54SC245-SEP SEL Bias Diagram SN54SC245-SEP SEL Bias Diagram SN54SC245-SEP Thermal Image for SEL SN54SC245-SEP Thermal Image for SEL Irradiation Facility and Setup The heavy ion species used for the SEE studies on this product were provided and delivered by the Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB linac infrastructure with a user experimental station at the end of the FSEE beamline. Ion beams are delivered with high uniformity over a 1-inch diameter exposure area using a thin vacuum window. For this study, ion flux of 105 ions / s-cm2 was used to provide heavy ion fluence of 1 × 107 ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ. Ion beam non-uniformity for all tests was 6.7%. shows one of the three SN54SC245-SEP test board used for experiments at the MSU FSEE facility. The in-air gap between the device and the ion beam port window was maintained at 70 mm for all runs. SN54SC245-SEP Evaluation Board at the MSU FRIB Facility Irradiation Facility and Setup The heavy ion species used for the SEE studies on this product were provided and delivered by the Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB linac infrastructure with a user experimental station at the end of the FSEE beamline. Ion beams are delivered with high uniformity over a 1-inch diameter exposure area using a thin vacuum window. For this study, ion flux of 105 ions / s-cm2 was used to provide heavy ion fluence of 1 × 107 ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ. Ion beam non-uniformity for all tests was 6.7%. shows one of the three SN54SC245-SEP test board used for experiments at the MSU FSEE facility. The in-air gap between the device and the ion beam port window was maintained at 70 mm for all runs. SN54SC245-SEP Evaluation Board at the MSU FRIB Facility The heavy ion species used for the SEE studies on this product were provided and delivered by the Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB linac infrastructure with a user experimental station at the end of the FSEE beamline. Ion beams are delivered with high uniformity over a 1-inch diameter exposure area using a thin vacuum window. For this study, ion flux of 105 ions / s-cm2 was used to provide heavy ion fluence of 1 × 107 ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ. Ion beam non-uniformity for all tests was 6.7%. shows one of the three SN54SC245-SEP test board used for experiments at the MSU FSEE facility. The in-air gap between the device and the ion beam port window was maintained at 70 mm for all runs. SN54SC245-SEP Evaluation Board at the MSU FRIB Facility The heavy ion species used for the SEE studies on this product were provided and delivered by the Facility for Rare Isotope Beams (FRIB) at Michigan State University – FRIB Single Event Effects (FSEE) Facility’s linear accelerator. The FSEE Facility has a dedicated beamline built on the FRIB linac infrastructure with a user experimental station at the end of the FSEE beamline. Ion beams are delivered with high uniformity over a 1-inch diameter exposure area using a thin vacuum window. For this study, ion flux of 105 ions / s-cm2 was used to provide heavy ion fluence of 1 × 107 ions / cm2 using 129Xe ion at a linac energy of 25 MeV / µ. Ion beam non-uniformity for all tests was 6.7%.5272129 shows one of the three SN54SC245-SEP test board used for experiments at the MSU FSEE facility. The in-air gap between the device and the ion beam port window was maintained at 70 mm for all runs. SN54SC245-SEP Evaluation Board at the MSU FRIB Facility SN54SC245-SEP Evaluation Board at the MSU FRIB Facility Results SEL Results During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated (see Figure 3-5). The species used for SEL testing was a Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A fluence of approximately 1 × 107 ions / cm2 were used for the runs. The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a Tektronix AFG3102 function generator. The run duration to achieve this fluence was approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven, respectively. Summary of SN54SC245-SEP Test Conditions and Results Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°C No SEL events were observed, which indicates that the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg and T = 125°C. Using the MFTF method described in , the upper-bound cross-section (using a 95% confidence level) is calculated as: σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 43 MeV-cm2 / mg and T = 125°C. Event Rate Calculations Event rates were calculated for LEO (ISS) and GEO environments by combining CREME96 orbital integral flux estimations and simplified SEE cross-sections according to methods described in Heavy Ion Orbital Environment Single-Event Effects Estimations . A minimum shielding configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is important to note that this number is for reference since no SEL events were observed. SEL Event Rate Calculations for Worst-Week LEO and GEO Orbits Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 MTBE is the mean-time-between-events in years at the given event rates. These rates clearly demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative space environments. Customers using the SN54SC245-SEP must only use the above estimations as a rough guide and TI recommends performing event rate calculations based on specific mission orbital and shielding parameters to determine if the product satisfies the reliability requirements for the specific mission. Results SEL Results During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated (see Figure 3-5). The species used for SEL testing was a Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A fluence of approximately 1 × 107 ions / cm2 were used for the runs. The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a Tektronix AFG3102 function generator. The run duration to achieve this fluence was approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven, respectively. Summary of SN54SC245-SEP Test Conditions and Results Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°C No SEL events were observed, which indicates that the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg and T = 125°C. Using the MFTF method described in , the upper-bound cross-section (using a 95% confidence level) is calculated as: σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 43 MeV-cm2 / mg and T = 125°C. SEL Results During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated (see Figure 3-5). The species used for SEL testing was a Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A fluence of approximately 1 × 107 ions / cm2 were used for the runs. The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a Tektronix AFG3102 function generator. The run duration to achieve this fluence was approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven, respectively. Summary of SN54SC245-SEP Test Conditions and Results Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°C No SEL events were observed, which indicates that the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg and T = 125°C. Using the MFTF method described in , the upper-bound cross-section (using a 95% confidence level) is calculated as: σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 43 MeV-cm2 / mg and T = 125°C. During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated (see Figure 3-5). The species used for SEL testing was a Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A fluence of approximately 1 × 107 ions / cm2 were used for the runs. The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a Tektronix AFG3102 function generator. The run duration to achieve this fluence was approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven, respectively. Summary of SN54SC245-SEP Test Conditions and Results Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°C No SEL events were observed, which indicates that the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg and T = 125°C. Using the MFTF method described in , the upper-bound cross-section (using a 95% confidence level) is calculated as: σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 43 MeV-cm2 / mg and T = 125°C. During SEL characterization, the device was heated using forced hot air, maintaining device temperature at 125°C. A FLIR (FLIR ONE Pro LT) thermal camera was used to validate die temperature to make sure the device was being accurately heated (see Figure 3-5). The species used for SEL testing was a Xenon (129Xe) ion at a linac energy of 25 MeV / µ with an angle-of-incidence of 0° for an LETEFF of 43 MeV-cm2 / mg. A fluence of approximately 1 × 107 ions / cm2 were used for the runs.129EFF272The three devices were powered up and exposed to the heavy-ions using the maximum recommended supply voltage of 5.5 V with a National Instruments PXI Chassis PXIe-1085 and a 5-V, 1 MHz square wave input using a Tektronix AFG3102 function generator. The run duration to achieve this fluence was approximately two minutes. As listed in , no SEL events were observed during the nine runs, which indicates that the SN54SC245-SEP is SEL-free. , , and show the plot of current versus time for runs one, four, and seven, respectively. Summary of SN54SC245-SEP Test Conditions and Results Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No Summary of SN54SC245-SEP Test Conditions and Results Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? Run Number Unit Number Distance (mm) Temperature (°C) Ion Angle FLUX (ions × cm2 / mg) Fluence (Number of ions) LETEFF (MeV × cm2 / mg) Did an SEL event occur? Run NumberUnit NumberDistance (mm)Temperature (°C)IonAngleFLUX (ions × cm2 / mg)2Fluence (Number of ions)LETEFF (MeV × cm2 / mg)EFF2Did an SEL event occur? 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 1 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 1170121Xe0°1.00E + 051.00E + 0743No 2 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 2170121Xe0°1.00E + 051.00E + 0743No 3 1 70 121 Xe 0° 1.00E + 05 1.00E + 07 43 No 3170121Xe0°1.00E + 051.00E + 0743No 4 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 4270124Xe0°1.00E + 051.00E + 0743No 5 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 5270124Xe0°1.00E + 051.00E + 0743No 6 2 70 124 Xe 0° 1.00E + 05 1.00E + 07 43 No 6270124Xe0°1.00E + 051.00E + 0743No 7 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 7370126Xe0°1.00E + 051.00E + 0743No 8 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 8370126Xe0°1.00E + 051.00E + 0743No 9 3 70 126 Xe 0° 1.00E + 05 1.00E + 07 43 No 9370126Xe0°1.00E + 051.00E + 0743No Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 1 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 4 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°C Current versus Time for Run Number 7 of the SN54SC245-SEP at T = 125°CNo SEL events were observed, which indicates that the SN54SC245-SEP is SEL-immune at LETEFF = 43 MeV-cm2 / mg and T = 125°C. Using the MFTF method described in , the upper-bound cross-section (using a 95% confidence level) is calculated as:EFF2σSEL ≤ 1.23 × 10–7 cm2/ device for LETEFF = 43 MeV-cm2 / mg and T = 125°C.SEL–72EFF2 Event Rate Calculations Event rates were calculated for LEO (ISS) and GEO environments by combining CREME96 orbital integral flux estimations and simplified SEE cross-sections according to methods described in Heavy Ion Orbital Environment Single-Event Effects Estimations . A minimum shielding configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is important to note that this number is for reference since no SEL events were observed. SEL Event Rate Calculations for Worst-Week LEO and GEO Orbits Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 MTBE is the mean-time-between-events in years at the given event rates. These rates clearly demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative space environments. Customers using the SN54SC245-SEP must only use the above estimations as a rough guide and TI recommends performing event rate calculations based on specific mission orbital and shielding parameters to determine if the product satisfies the reliability requirements for the specific mission. Event Rate Calculations Event rates were calculated for LEO (ISS) and GEO environments by combining CREME96 orbital integral flux estimations and simplified SEE cross-sections according to methods described in Heavy Ion Orbital Environment Single-Event Effects Estimations . A minimum shielding configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is important to note that this number is for reference since no SEL events were observed. SEL Event Rate Calculations for Worst-Week LEO and GEO Orbits Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 MTBE is the mean-time-between-events in years at the given event rates. These rates clearly demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative space environments. Customers using the SN54SC245-SEP must only use the above estimations as a rough guide and TI recommends performing event rate calculations based on specific mission orbital and shielding parameters to determine if the product satisfies the reliability requirements for the specific mission. Event rates were calculated for LEO (ISS) and GEO environments by combining CREME96 orbital integral flux estimations and simplified SEE cross-sections according to methods described in Heavy Ion Orbital Environment Single-Event Effects Estimations . A minimum shielding configuration of 100 mils (2.54 mm) of aluminum and worst-week solar activity is assumed. (This is similar to a 99% upper bound for the environment). #GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 lists the event rate calculations using the 95% upper-bounds for the SEL. It is important to note that this number is for reference since no SEL events were observed. SEL Event Rate Calculations for Worst-Week LEO and GEO Orbits Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 MTBE is the mean-time-between-events in years at the given event rates. These rates clearly demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative space environments. Customers using the SN54SC245-SEP must only use the above estimations as a rough guide and TI recommends performing event rate calculations based on specific mission orbital and shielding parameters to determine if the product satisfies the reliability requirements for the specific mission. Heavy Ion Orbital Environment Single-Event Effects Estimations Heavy Ion Orbital Environment Single-Event Effects Estimations#GUID-6B4B416D-3628-4DC4-A94C-86085585677E/SLAK0081309 SEL Event Rate Calculations for Worst-Week LEO and GEO Orbits Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 SEL Event Rate Calculations for Worst-Week LEO and GEO Orbits Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) Orbit Type Onset LET (MeV–cm2 / mg) CREME96 Integral Flux ( / day–cm2) σSAT (cm2) Event Rate ( / day) Event Rate (FIT) MTBE (years) Orbit TypeOnset LET (MeV–cm2 / mg)2CREME96 Integral Flux ( / day–cm2)2σSAT (cm2)SAT2Event Rate ( / day)Event Rate (FIT)MTBE (years) LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 LEO(ISS) 43 6.40 × 10-4 1.23 × 10-7 7.87 × 10-11 3.28 × 10-3 3.48 × 107 LEO(ISS)436.40 × 10-4 -41.23 × 10-7 -77.87 × 10-11 -113.28 × 10-3 -33.48 × 107 7 GEO 2.17 × 10-3 2.67 × 10-10 1.11 × 10-2 1.03 × 107 GEO2.17 × 10-3 -32.67 × 10-10 -101.11 × 10-2 -21.03 × 107 7MTBE is the mean-time-between-events in years at the given event rates. These rates clearly demonstrate the SEE robustness of the SN54SC245-SEP in two harshly conservative space environments. Customers using the SN54SC245-SEP must only use the above estimations as a rough guide and TI recommends performing event rate calculations based on specific mission orbital and shielding parameters to determine if the product satisfies the reliability requirements for the specific mission. Summary The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference. Summary The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference. The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference. The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC245-SEP, a radiation-tolerant 1.2-V to 5.5-V octal bus transceivers with tri-state outputs. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC245-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are shown for reference.EFF2EFF2 References M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility , webpage. James F. Ziegler, "The Stopping and Range of Ions in Matter" software simulation tool, webpage. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193. Vanderbilt University, ISDE CRÈME-MC , webpage. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149. References M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility , webpage. James F. Ziegler, "The Stopping and Range of Ions in Matter" software simulation tool, webpage. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193. Vanderbilt University, ISDE CRÈME-MC , webpage. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility , webpage. James F. Ziegler, "The Stopping and Range of Ions in Matter" software simulation tool, webpage. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193. Vanderbilt University, ISDE CRÈME-MC , webpage. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532. Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility , webpage. James F. Ziegler, "The Stopping and Range of Ions in Matter" software simulation tool, webpage. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193. Vanderbilt University, ISDE CRÈME-MC , webpage. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.IEEE Trans. Nucl. Sci., Vol. 33(6)G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.IEEE Trans. Nucl. Sci., Vol. 43(2)Cyclotron Institute, Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility , webpage. Texas A&M University Cyclotron Institute Radiation Effects Facility Texas A&M University Cyclotron Institute Radiation Effects Facility James F. Ziegler, "The Stopping and Range of Ions in Matter" software simulation tool, webpage. "The Stopping and Range of Ions in Matter" software simulation tool"The Stopping and Range of Ions in Matter"D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.Vanderbilt University, ISDE CRÈME-MC , webpage. ISDE CRÈME-MC ISDE CRÈME-MC A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.IEEE Trans. on Nucl. Sci., Vol. 44(6)A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.IEEE Trans. on Nucl. 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IMPORTANT NOTICE Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2023, Texas Instruments Incorporated TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, regulatory or other requirements. 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IMPORTANT NOTICE TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, regulatory or other requirements. These resources are subject to change without notice. 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IMPORTANT NOTICE TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, regulatory or other requirements. These resources are subject to change without notice. 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IMPORTANT NOTICE TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, regulatory or other requirements. These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, regulatory or other requirements. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. These resources are subject to change without notice. TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products. TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for TI products.TI’s Terms of Saleti.com TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE IMPORTANT NOTICE Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2023, Texas Instruments Incorporated Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2023, Texas Instruments Incorporated Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2023, Texas Instruments Incorporated Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2023, Texas Instruments Incorporated Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2023, Texas Instruments Incorporated Copyright © 2023, Texas Instruments Incorporated, the upper-bound cross-section (using a 95% confidence level) is calculated as: