SBOK079 October   2023 TPS7H2140-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14. 11References

6 Test Setup and Procedures

SEE testing was performed on a TPS7H2140-SEP device mounted on a TPS7H2140-SEP SEE validation board. VIN, ranging from 4.5 V for SET to 32 V for SEL and SEB/SEGR, was provided to the device using the J21 (IN) and (GND) inputs with the N6766A PS Module mounted on a N6705 precision power supply in a 4-wire configuration. An external source for the I/O pins, ranging from 4.5 V for SET to 5 V for SEL and SEB/SEGR, was provided using the J33 (5 V) and (GND) inputs through channel 1 of an E36311A power supply. A second E36311A power supply, using channel 1 and channel 2, was used on TP1 (EN1) and TP2 (EN2) for ENx, which ranged from 0 V for SEB Off to 4.5 V for SET testing and 5 V for all DSEE testing.

During SEL testing, the device was heated to 125°C by using a TDH35P10R0JE discrete power resistor soldered under the thermal vias on the bottom layer of the validation card. Using a PXIe-4139 SMU, a current of 1 A was forced into the power resistor elevating the die temperature to 125°C. The temperature of the die was verified using a FLIR thermal camera.

The instrument used to load the TPS7H2140-SEP was a Chroma E36300 E-Load that was used in Constant Resistance (CR) mode. The value of CR was adjusted depending on the type of test. For SEL and SEB/SEGR testing, the CR value was set to achieve a total load of 1.35 A per channel. For SET testing, the CR value was set to achieve a total load of 0.5 A per channel.

During all SEE testing, OUT1 was operated independently while OUT2, OUT3, and OUT4 were operated in parallel. Based on Figure 3-3, J16 and J17 were used to place EN2, EN3, and EN4 in parallel operation while J19 and J20 were used to place OUT2, OUT3, and OUT4 in parallel operation.

The signals monitored included OUT1, OUT2, CS, and FAULT. OUT1 was monitored using a MSO58B which was set to trigger on a 3% window based on the nominal value of OUT1. OUT2 was monitored using a NI PXIe-5172 scope card which was set to trigger on a 3% window based on the nominal value of OUT2. CS was monitored using a second NI PXIe-5172 scope card which was set to trigger on a 4% window based on the nominal value of CS. FAULT was monitored using a NI PXIe-5160 scope card which was set to trigger on a negative edge trigger of 1 V less than the nominal value of FAULT.

All equipment other than the MSO58B was controlled and monitored using a custom-developed LabVIEW™ program (PXI-RadTest) running on a HP-Z4® desktop computer. The computer communicates with the PXI chassis via an MXI controller and NI PXIe-8381 remote control module. The MSO58B was used using the manufacturer interface. The MSO was set to fast-frame for all SET data collection.

Table 6-1 shows the connections, limits, and compliance values used during the testing. Figure 6-1 shows a block diagram of the setup used for SEE testing of the TPS7H2140-SEP.

Table 6-1 Equipment Set and Parameters used for SEE Testing the TPS7H2140-SEP
Pin Name Equipment Used Equipment Channel Used Capability Compliance Range of Values Used Trigger
IN Agilent N6766A Channel 3 60 V, 17 A 10-A 4.5 to 32-V —
EN1 Keysight E36311A (1) Channel 1 6 V, 5 A 0.1 A 0 to 5 V —
EN2 Keysight E36311A (1) Channel 2 25 V, 1 A 0.1 A 0 to 5 V —
External 5-V source Keysight E36311A (2) Channel 1 6 V, 5 A 0.1 A 4.5 to 5 V —
Heater NI PXIe-4139 Channel 1 60 V, 3 A 15 V 1 A —
OUT1 MSO58B — 6.25 GS / s — 100 MS / s Window at ±3%
OUT2 NI PXIe-5172 (1) — 100 MS / s — 10 MS / s Window at ±3%
CS NI PXIe-5172 (2) — 100 MS / s — 10 MS / s Window at ±4%
FAULT NI PXIe-5160 — 100 MS/s — 10 MS / s Negative edge at nominal 1 V

All boards used for SEE testing were fully checked for functionality. Dry runs were also performed to make sure that the test system was stable under all bias and load conditions prior to being taken to the TAMU facility. During the heavy-ion testing, the LabVIEW control program powered up the TPS7H2140-SEP device and set the external sourcing and monitoring functions of the external equipment. After functionality and stability was confirmed, the beam shutter was opened to expose the device to the heavy-ion beam. The shutter remained open until the target fluence was achieved (determined by external detectors and counters). During irradiation, the MSO and NI scope cards continuously monitored the signals. When OUTX exceeded the predefined 3% window triggers, CS exceeded the predefined 4% window triggers, or when the FAULT signal changed from high to low (using a negative edge trigger), a data capture was initiated. In addition to monitoring the voltage levels from the scopes, VIN current and the 5-V signal from TAMU were monitored at all times. No sudden increases in current were observed (outside of normal fluctuations) on any of the test runs and indicated that SEL or SEB/SEGR events did not occur during any of the tests.

GUID-20230914-SS0I-X25J-MDLL-5XKM1SBS1V1S-low.svg Figure 6-1 Block Diagram of SEE Test Setup with the TPS7H2140-SEP