SLVK162 December   2023 TPS7H6003-SP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Product Description
    2. 1.2 Device Details
  5. 2Neutron Displacement Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Facility
    3. 2.3 Test Setup Details
  6. 3Test Results
    1. 3.1 NDD Characterization Summary
    2. 3.2 Data Sheet Electrical Parameters and Associated Tests
  7. 4Applicable and Reference Documents
    1. 4.1 Applicable Documents
    2. 4.2 Reference Documents
  8.   A Appendix: NDD Report Data

1.1 Product Description

The TPS7H6003-SP is a 200-V radiation-hardness-assured, high voltage gate driver for GaN FETs for space applications. The TPS7H6003-SP is designed for high frequency, high efficiency applications. The driver features adjustable dead time capability, small 30-ns propagation delay and 5.5-ns high-side and low-side matching. This part also includes internal high-side and low-side LDOs that make sure that a drive voltage of 5-V regardless of supply voltage. The TPS7H6003-SP is packaged in a ceramic 48-HBX (CFP) package.