SLYY203B September   2021  – April 2023 BQ25125 , LM5123-Q1 , LMR43610 , LMR43610-Q1 , LMR43620 , LMR43620-Q1 , TPS22916 , TPS3840 , TPS62840 , TPS63900 , TPS7A02

 

  1.   1
  2.   Overview
  3.   At a glance
  4.   Contributors to IQ
  5.   Why low IQ creates new challenges
    1.     Transient response
    2.     Ripple
    3.     Noise
    4.     Die size and solution area
    5.     Leakage and subthreshold operation
  6.   How to break low IQ barriers
    1.     Addressing transient response issues
    2.     Addressing switching-noise issues
    3.     Addressing other noise issues
    4.     Addressing die size and solution area issues
    5.     Addressing leakage and subthreshold operation issues
  7.   Electrical Characteristics
    1.     18
    2.     Avoiding potential system pitfalls in a low-IQ designs
    3.     Achieving low IQ, but not losing flexibility
    4.     Reducing external component count to lower IQ in automotive applications automotive applications
    5.     Smart on or enable features supporting low-IQ at the Smart on or enable features supporting low-IQ at the system level
  8.   Conclusion
  9.   Key product categories for low IQ

Addressing die size and solution area issues

One of the largest-area blocks in nanopower regulators is the current reference, which is responsible for creating 1- to 10-nA bias legs. The current bias generation area within the current reference block is dominated by resistor components. Applying smaller voltage biases across small-value resistors will reduce resistor values. One technique generates ∆Vgst/R or ∆Vbe/R circuits when forming a reference bias current.

Figure 15 shows a clever implementation of an almost zero-temperature coefficient bias current, creating positive and negative coefficient temperature bias currents with a small voltage bias across resistors R1 and Rbias.

  1. V G S T = 2 × V T × l n N
  2. I b = 2 × V T × l n N R b i a s + V G S 6 R 1
Figure 15 Circuit diagram of low-area 1-nA current reference. GUID-20220614-SS0I-5DJC-CRMG-W3Q0WLWSTTVZ-low.gif

These techniques enable a lower passive area, and effectively a smaller die area. The IQ-multiplied-by- smallest-package-area FOM is the best way to compare the area efficiency of such techniques. The TPS7A02 device was released in a 1-mm-by-1-mm dual-flat-no-leads (DQN) package in 2019, while its wafer chip-scale package (WCSP) counterpart released in 2021. This LDO boasts one of the industry’s lowest-IQ-package-area-efficiency FOMs at <10 nA-mm2. Figure 16 demonstrates a side-by-side comparison of the typical 0402 capacitor vs the DQN and WCSP package offered for TPS7A02.

GUID-20210902-SS0I-0G6K-ZVFN-RJV6HCXV2G6W-low.gif Figure 16 Side-by-side size comparison of TPS7A02 in a DQN package, 0402 capacitor and WCSP package.

When applying similar area-reduction techniques to supply voltage supervisors, the primary challenge is how to sense voltages >10V and still achieve IQ levels <0.5µA. Capacitive sensing of the monitored voltage, combined with sample-and-hold techniques, can reduce the die area and improve the response time. The TPS3840 nanopower high-input voltage supervisor has an IQ <350nA, achieving a reset propagation delay as low as 15μs while directly monitoring 10V rails.

GUID-20210902-SS0I-RVCT-RMG8-1JKG4LZQBFX3-low.gif Figure 17 System-level diagram of a nanoampere charger system.

One of the most compelling ways to save board area is to integrate more functions onto a single die. This integration enables blocks like the supervisor, reference system, LDO, battery charger and DC/DC converter to share common building blocks while reducing the combined IQ. Figure 17 demonstrates the ability of the BQ25125, a battery charge management IC, to integrate and flexibly control multiple low-IQ functions with I2C, which gives it a key advantage to bring an entire power-management system to wearable, metering and automotive sensor IoT applications.