SLUSBU9D March 2014  – May 2016


  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Configurations
  6. Pin Configuration and Functions
    1. 6.1Pin Descriptions
      1. 6.1.1Supply Input: BAT
      2. 6.1.2Cell Negative Connection: VSS
      3. 6.1.3Voltage Sense Node: V-
      4. 6.1.4Discharge FET Gate Drive Output: DOUT
      5. 6.1.5Charge FET Gate Drive Output: COUT
  7. Specifications
    1. 7.1Absolute Maximum Ratings
    2. 7.2ESD Ratings
    3. 7.3Recommended Operating Conditions
    4. 7.4Thermal Information
    5. 7.5DC Characteristics
    6. 7.6Programmable Fault Detection Thresholds
    7. 7.7Programmable Fault Detection Timer Ranges
    8. 7.8Typical Characteristics
  8. Parameter Measurement Information
    1. 8.1Timing Charts
    2. 8.2Test Circuits
    3. 8.3Test Circuit Diagrams
  9. Detailed Description
    1. 9.1Overview
    2. 9.2Functional Block Diagram
    3. 9.3Feature Description
    4. 9.4Device Functional Modes
      1. 9.4.1Normal Operation
      2. 9.4.2Overcharge Status
      3. 9.4.3Over-Discharge Status
      4. 9.4.4Discharge Overcurrent Status (Discharge Overcurrent, Load Short-Circuit)
      5. 9.4.5Charge Overcurrent Status
      6. 9.4.60-V Charging Function (Available)
      7. 9.4.70-V Charging Function (Unavailable)
      8. 9.4.8Delay Circuit
  10. 10Applications and Implementation
    1. 10.1Application Information
    2. 10.2Typical Application
      1. 10.2.1Design Requirements
      2. 10.2.2Detailed Design Procedure
      3. 10.2.3Application Performance Plots
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1Layout Guidelines
    2. 12.2Layout Example
  13. 13Device and Documentation Support
    1. 13.1Related Links
    2. 13.2Community Resources
    3. 13.3Trademarks
    4. 13.4Electrostatic Discharge Caution
    5. 13.5Glossary
  14. 14Mechanical, Packaging, and Orderable Information

13 Device and Documentation Support

13.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

13.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

13.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

13.4 Electrostatic Discharge Caution


This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

13.5 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.