Inicio Gestión de la energía Interruptores de potencia Controladores de diodo ideal/ORing
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Gestión de la energía
Interruptores de potencia
Controladores de diodo ideal/ORing

LM74701-Q1

ACTIVO

Controlador de diodo ideal de protección contra batería inversa de 3.2 V a 65 V con pinza VDS integr

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LM74701-Q1

ACTIVO
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Detalles del producto

Vin (min) (V) 3.2 Vin (max) (V) 65 Number of channels 1 Features Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable FET External single FET IGate source (typ) (µA) 11000 IGate pulsed (typ) (A) 2.3 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Rating Automotive Imax (A) 250 Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3.2 Vin (max) (V) 65 Number of channels 1 Features Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable FET External single FET IGate source (typ) (µA) 11000 IGate pulsed (typ) (A) 2.3 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Rating Automotive Imax (A) 250 Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
SOT-23-THN (DDF) 8 8.12 mm² 2.9 x 2.8
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.
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Documentación técnica

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* Data sheet LM74701-Q1 TVS Less Automotive Reverse Battery Protection Ideal Diode Controller datasheet (Rev. A) PDF | HTML 14 dic 2021
Functional safety information LM74701-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 24 ene 2024
Analog Design Journal Going TVS-less in Automotive Reverse Battery Protection Designs PDF | HTML 18 nov 2021
User guide LM74701-Q1EVM User's Guide (Rev. A) PDF | HTML 08 sep 2021

Diseño y desarrollo

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Placa de evaluación

LM74701Q1EVM — Módulo de evaluación LM74701-Q1 para controlador de diodo ideal con abrazadera VDS integrada

El módulo de evaluación LM74701-Q1 (LM74701Q1EVM) ayuda a los diseñadores a evaluar el funcionamiento y el rendimiento del controlador de diodo ideal LM74701-Q1 con abrazadera VDS integrada. Este módulo de evaluación demuestra cómo se puede utilizar un MOSFET de potencia de canal N para realizar (...)

Guía del usuario: PDF | HTML
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Modelo de simulación

LM74701-Q1 PSpice Transient Model

SNOM717.ZIP (107 KB) - PSpice Model
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Herramienta de simulación

PSPICE-FOR-TI — PSpice® para herramienta de diseño y simulación de TI

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Diseños de referencia

TIDA-010253 — Battery control unit reference design for energy storage systems

This reference design is a central controller for a high-voltage Lithium-ion (Li-ion), lithium iron phosphate (LiFePO4) battery rack. This design provides driving circuits for high-voltage relay, communication interfaces, (including RS-485, controller area network (CAN), daisy chain, and Ethernet), (...)
Design guide: PDF
Paquete Pasadores Descargar
SOT-23-THN (DDF) 8 Ver opciones
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Pedidos y calidad

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  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
  • Lugar de ensamblaje

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