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Controlador de puerta compuesto dual de 5 A

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UCC27624 ACTIVO Controlador de puerta de doble canal de 5 A/5 A con UVLO de 4 V, VDD de 30 V y retardo de propagació Replacement

Detalles del producto

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features PFET Drive Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features PFET Drive Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Renewable Energy Grade
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A Sink, 3A Source Current Capability
  • Two Channels Can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
  • Available in Dual Noninverting, Dual Inverting, and Combination Configurations
  • Supply Rail Under-Voltage Lockout Protection (UVLO)
  • SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Packages
    • SOIC
    • Thermally Enhanced VSSOP

All trademarks are the property of their respective owners.

  • Renewable Energy Grade
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A Sink, 3A Source Current Capability
  • Two Channels Can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
  • Available in Dual Noninverting, Dual Inverting, and Combination Configurations
  • Supply Rail Under-Voltage Lockout Protection (UVLO)
  • SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Packages
    • SOIC
    • Thermally Enhanced VSSOP

All trademarks are the property of their respective owners.

The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.

The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.

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Documentación técnica

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Tipo Título Fecha
* Data sheet SM72482 Dual 5A Compound Gate Driver datasheet (Rev. C) 01 abr 2013
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 oct 2018

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

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Diseños de referencia

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Test report: PDF
Esquema: PDF
Paquete Pasadores Descargar
SOIC (D) 8 Ver opciones

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

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