제품 상세 정보

Supply voltage (min) (V) 4.75 Supply voltage (max) (V) 5.25 Number of channels 8 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family FCT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.75 Supply voltage (max) (V) 5.25 Number of channels 8 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family FCT Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² 15.5 x 10.3 SSOP (DBQ) 24 51.9 mm² 8.65 x 6
  • Function, Pinout, and Drive Compatible With FCT and F Logic
  • Reduced VOH (Typically = 3.3 V) Versions of Equivalent FCT Functions
  • Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics
  • Ioff Supports Partial-Power-Down Mode Operation
  • Matched Rise and Fall Times
  • Fully Compatible With TTL Input and Output Logic Levels
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • Independent Register for A and B Buses
  • CY54FCT646T
    • 48-mA Output Sink Current
    • 12-mA Output Source Current
  • CY74FCT646T
    • 64-mA Output Sink Current
    • 32-mA Output Source Current
  • 3-State Outputs

  • Function, Pinout, and Drive Compatible With FCT and F Logic
  • Reduced VOH (Typically = 3.3 V) Versions of Equivalent FCT Functions
  • Edge-Rate Control Circuitry for Significantly Improved Noise Characteristics
  • Ioff Supports Partial-Power-Down Mode Operation
  • Matched Rise and Fall Times
  • Fully Compatible With TTL Input and Output Logic Levels
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • Independent Register for A and B Buses
  • CY54FCT646T
    • 48-mA Output Sink Current
    • 12-mA Output Source Current
  • CY74FCT646T
    • 64-mA Output Sink Current
    • 32-mA Output Source Current
  • 3-State Outputs

The \x92FCT646T devices consist of a bus transceiver circuit with 3-state, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the input bus or from the internal registers. Data on the A or B bus is clocked into the registers as the appropriate clock pin goes to a high logic level. Output-enable (G\) and direction (DIR) inputs control the transceiver function. In the transceiver mode,data present at the high-impedance port can be stored in either the A or B register, or in both. Select controls (SAB, SBA) can multiplex stored and real-time (transparent mode) data. DIR determines which bus receives data when G\ is low. In the isolation mode (G\ is high), A data can be stored in the B register and/or B data can be stored in the A register.

These devices are fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

The \x92FCT646T devices consist of a bus transceiver circuit with 3-state, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the input bus or from the internal registers. Data on the A or B bus is clocked into the registers as the appropriate clock pin goes to a high logic level. Output-enable (G\) and direction (DIR) inputs control the transceiver function. In the transceiver mode,data present at the high-impedance port can be stored in either the A or B register, or in both. Select controls (SAB, SBA) can multiplex stored and real-time (transparent mode) data. DIR determines which bus receives data when G\ is low. In the isolation mode (G\ is high), A data can be stored in the B register and/or B data can be stored in the A register.

These devices are fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치보다 업그레이드된 기능을 지원하는 즉각적 대체품
CD74ACT646 활성 3상 출력을 지원하는 8진 비인버팅 버스 트랜시버/레지스터 Higher average drive strength (24mA)
비교 대상 장치와 유사한 기능
SN74ACT245 활성 TTL 호환 CMOS 입력 및 3상 출력을 지원하는 옥탈 버스 트랜시버 Higher average drive strength (24mA)

기술 문서

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모두 보기8
유형 직함 날짜
* Data sheet 8-Bit Registered Transceivers With 3-State Outputs datasheet (Rev. A) 2001/10/01
Selection guide Logic Guide (Rev. AB) 2017/06/12
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015/12/02
User guide LOGIC Pocket Data Book (Rev. B) 2007/01/16
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08
Application note Selecting the Right Level Translation Solution (Rev. A) 2004/06/22
User guide CYFCT Parameter Measurement Information 2001/04/02
Selection guide Advanced Bus Interface Logic Selection Guide 2001/01/09

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

14-24-LOGIC-EVM — 14핀~24핀 D, DB, DGV, DW, DYY, NS 및 PW 패키지용 로직 제품 일반 평가 모듈

14-24-LOGIC-EVM 평가 모듈(EVM)은 14핀~24핀 D, DW, DB, NS, PW, DYY 또는 DGV 패키지에 있는 모든 로직 장치를 지원하도록 설계되었습니다.

사용 설명서: PDF | HTML
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패키지 다운로드
SOIC (DW) 24 옵션 보기
SSOP (DBQ) 24 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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