제품 상세 정보

Type Latch Operate point (typ) (mT) 2 Operate point (max) (mT) 3.3 Release point (min) (mT) -3.3 Supply current (µA) 1.3, 142 Bandwidth (kHz) 0.02, 2.5 Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 5.5 Rating Catalog Operating temperature range (°C) -40 to 85 Output Push-Pull output driver
Type Latch Operate point (typ) (mT) 2 Operate point (max) (mT) 3.3 Release point (min) (mT) -3.3 Supply current (µA) 1.3, 142 Bandwidth (kHz) 0.02, 2.5 Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 5.5 Rating Catalog Operating temperature range (°C) -40 to 85 Output Push-Pull output driver
X2SON (DMR) 4 1.54 mm² 1.4 x 1.1
  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range
  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

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관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
DRV5011 활성 소형(WCSP 및 X2SON에서 사용 가능), 저전압(최대 5.5V) 홀 효과 래치 DRV5011 offers a similar latch threshold for full bandwidth needs in the smallest package footprint.

기술 문서

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모두 보기11
유형 직함 날짜
* Data sheet DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor datasheet PDF | HTML 2017/08/18
Application brief Introduction to TI Magnetic Sense Simulator Features PDF | HTML 2023/12/05
User guide Texas Instruments' Magnetic Sense Simulator User's Guide PDF | HTML 2023/12/04
Application note Design Considerations & Measurement Results, Mechanical Hall-Effect Flow Meters PDF | HTML 2022/03/23
Application brief Using Hall-Effect Latches in Motorized Window Blinds PDF | HTML 2022/03/22
Application brief Designing With Hall-Effect Sensors for Rotary Flow Meter Applications PDF | HTML 2022/03/07
Application brief Incremental Rotary Encoders (Rev. B) PDF | HTML 2021/12/02
Application brief Two-State Selector Using Hall-Effect Sensors PDF | HTML 2021/12/01
Application brief Hall-Effect Sensors in Low-Power Applications (Rev. B) PDF | HTML 2021/10/15
EVM User's guide DRV5011-5012EVM User's Guide (Rev. A) 2019/11/15
Technical article You can be an electromechanical engineer PDF | HTML 2017/11/10

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